Insulating behavior in metallic bilayer graphene: Interplay between density inhomogeneity and temperature

Abstract

We investigate bilayer graphene transport in the presence of electron-hole puddles induced by long-range charged impurities in the environment. We explain the insulating behavior observed in the temperature dependent conductivity of low mobility bilayer graphene using an analytic statistical theory taking into account the non-mean-field nature of transport in the highly inhomogeneous density and potential landscape. We find that the puddles can induce, even far from the charge neutrality point, a coexisting metallic and insulating transport behavior due to the random local activation gap in the system.

5 pages, 3 figures

References in corpus (9)

• Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
• Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
• Gate-induced insulating state in bilayer graphene devices
• Observation of an Electric-Field Induced Band Gap in Bilayer Graphene by Infrared Spectroscopy
• Carrier scattering, mobilities and electrostatic potential in mono-, bi- and tri-layer graphenes
• Broken symmetry states and divergent resistance in suspended bilayer graphene
• Theory of carrier transport in bilayer graphene
• Charged impurity scattering in bilayer graphene
• Signatures of Klein tunneling in disordered graphene p-n-p junctions

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• Comparison of microscopic models for disorder in bilayer graphene: Implications for the density of states and the optical conductivity
• Quantum Capacitance of Graphene Sheets and Nanoribbons
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