Homogeneity of Bilayer Graphene

Abstract

We present non-linear transport measurements on suspended, current annealed bilayer graphene devices. Using a multi-terminal geometry we demonstrate that devices tend to be inhomogeneous and host two different electronic phases next to each other. Both of these phases show gap-like features of different magnitude in non-linear transport at low charge carrier densities, as already observed in previous studies. Here, we investigate the magnetic field dependence and find that both features grow with increasing field, the smaller one with 0.6 meV/T, the larger one with a 5-10 times higher field dependence. We attribute the larger of the two gaps to an interaction induced broken symmetry state and the smaller one to localization in the more disordered parts of the device.

9 pages, 4 figures, published version

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• High-quality multi-terminal suspended graphene devices
• Spin Symmetry of the Bilayer Graphene Groundstate
• Theory of integer quantum Hall effect in insulating bilayer graphene
• Triplet superconductivity and spin density wave in biased AB bilayer graphene
• Half-metal and other fractional metal phases in doped AB bilayer graphene
• Color degeneracy of competing orders near topological defects cores in planar quadratic band touching systems
• Ordered states in AB bilayer graphene in SU(4)-symmetric model
• Ordered states of undoped AB bilayer graphene: bias induced cascade of transitions