Half-metal and other fractional metal phases in doped AB bilayer graphene
arXiv:2301.02460 · doi:10.1103/PhysRevB.107.155112
Abstract
We theoretically argue that, in doped AB bilayer graphene, the electron-electron coupling can give rise to the spontaneous formation of fractional metal phases. These states, being generalizations of a more common half-metal, have a Fermi surface that is perfectly polarized not only in terms of a spin-related quantum number, but also in terms of the valley index. The proposed mechanism assumes that the ground state of undoped bilayer graphene is a spin density wave insulator, with a finite gap in the single-electron spectrum. Upon doping, the insulator is destroyed, and replaced by a fractional metal phase. As doping increases, transitions between various types of fractional metal (half-metal, quarter-metal, etc.) are triggered. Our findings are consistent with recent experiments on doped AB bilayer graphene, in which a cascade of phase transitions between different isospin states was observed.
arXiv comment7 pages, 2 figures, one extra figure, more details, PRB-style formatting
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