Chirality-dependent phonon-limited resistivity in multiple layers of graphene

Hongki Min; E. H. Hwang; S. Das Sarma

doi:10.1103/PhysRevB.83.161404

paper

Chirality-dependent phonon-limited resistivity in multiple layers of graphene

arXiv:1011.0741 · doi:10.1103/PhysRevB.83.161404

Abstract

We develop a theory for the temperature and density dependence of phonon-limited resistivity $ρ (T)$ in bilayer and multilayer graphene, and compare with the corresponding monolayer result. For the unscreened case, we find $ρ \approx C T$ with $C \propto v_{F}^{- 2}$ in the high-temperature limit, and $ρ \approx A T^{4}$ with $A \propto v_{F}^{- 2} k_{F}^{- 3}$ in the low-temperature Bloch-Grüneisen limit, where $v_{F}$ and $k_{F}$ are Fermi velocity and Fermi wavevector, respectively. If screening effects are taken into account, $ρ \approx C T$ in the high-temperature limit with a renormalized $C$ which is a function of the screening length, and $ρ \approx A T^{6}$ in the low-temperature limit with $A \propto k_{F}^{- 5}$ but independent of $v_{F}$ . These relations hold in general with $v_{F}$ and a chiral factor in $C$ determined by the specific chiral band structure for a given density.

5 pages, 3 figures; Included the effects of multiband screening; Accepted for publication in Phys. Rev. B Rapid Communication

Chirality-dependent phonon-limited resistivity in multiple layers of graphene

Abstract

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