Piezoelectric surface acoustical phonon limited mobility of electrons in graphene on a GaAs substrate
arXiv:1211.6280 · doi:10.1103/PhysRevB.87.075443
Abstract
We study the mobility of Dirac fermions in monolayer graphene on a GaAs substrate, restricted by the combined action of the extrinsic potential of piezoelectric surface acoustical phonons of GaAs (PA) and of the intrinsic deformation potential of acoustical eigen-phonons in graphene (DA). In the high temperature () regime the momentum relaxation rate exhibits the same linear dependence on but different dependences on the carrier density , corresponding to the mobility and , respectively for the PA and DA scattering mechanisms. In the low Bloch-Grüneisen regime, the mobility shows the same square-root density dependence, , but different temperature dependences, and , respectively for PA and DA phonon scattering.
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- Many-body effects in doped graphene on a piezoelectric substrate