paper

Phonon scattering induced carrier resistivity in twisted double bilayer graphene

arXiv:1906.08224 · doi:10.1103/PhysRevB.101.245436

Abstract

In this work we carry out a theoretical study of the phonon-induced resistivity in twisted double bilayer graphene (TDBG), in which two Bernal-stacked bilayer graphene devices are rotated relative to each other by a small angle . We show that at small twist angles () the effective mass of the TDBG system is greatly enhanced, leading to a drastically increased phonon-induced resistivity in the high-temperature limit where phonon scattering leads to a linearly increasing resistivity with increasing temperature. We also discuss possible implications of our theory on superconductivity in such a system, and provide an order of magnitude estimation of the superconducting transition temperature.

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