Phonon scattering induced carrier resistivity in twisted double bilayer graphene
arXiv:1906.08224 · doi:10.1103/PhysRevB.101.245436
Abstract
In this work we carry out a theoretical study of the phonon-induced resistivity in twisted double bilayer graphene (TDBG), in which two Bernal-stacked bilayer graphene devices are rotated relative to each other by a small angle . We show that at small twist angles () the effective mass of the TDBG system is greatly enhanced, leading to a drastically increased phonon-induced resistivity in the high-temperature limit where phonon scattering leads to a linearly increasing resistivity with increasing temperature. We also discuss possible implications of our theory on superconductivity in such a system, and provide an order of magnitude estimation of the superconducting transition temperature.
The submission is updated with the published and revised final version
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- Electric-field-tunable electronic nematic order in twisted double-bilayer graphene
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- Topological phases in N-layer ABC-graphene boron-nitride moire superlattices
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- Acoustic phonon contribution to the resistivity of twisted bilayer graphene
- Interplay of Landau quantization and interminivalley scatterings in a weakly coupled moiré superlattice
- The kinetic theory of ultra-subsonic fermion systems and applications to flat band magic angle twisted bilayer graphene
- Low-frequency and Moiré Floquet engineering: a review