Temperature-linear Resistivity in Twisted Double Bilayer Graphene
arXiv:2104.05406 · doi:10.1103/PhysRevB.106.035107
Abstract
We report an experimental study of carrier density (n), displacement field (D) and twist angle (θ) dependence of temperature (T)-linear resistivity in twisted double bilayer graphene (TDBG). For a large twist angle (θ>1.5°) where correlated insulating states are absent, we observe a T-linear resistivity (with the slope of the order ~10Ω/K) over a wide range of carrier density and its slope decreases with increasing of n, in agreement with acoustic phonon scattering model semi-quantitatively. The slope of T-linear resistivity is non-monotonically dependent on the displacement field with a single peak structure. For device with θ~1.23° at which correlated states emerge, the slope of T-linear resistivity is found maximum (~100Ω/K) at the boundary of the halo structure where phase transition occurs, with signatures of continuous phase transition, Planckian dissipation, and the diverging effective mass; these observations are in line with quantum critical behaviors, which might be due to the symmetry-breaking instability at the critical points. Our results shed new light on correlated physics in TDBG and other twisted moiré systems.
Accepted by Phys. Rev. B, with 20 pages and 15 figures
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- Planckian properties of 2D semiconductor systems
- Quantum-Acoustical Drude Peak Shift
- Observation of first-order quantum phase transitions and ferromagnetism in twisted double bilayer graphene
- Quantum acoustics unravels Planckian resistivity
- Interplay of Landau quantization and interminivalley scatterings in a weakly coupled moiré superlattice
- Quantum oscillations in field-induced correlated insulators of a moiré superlattice
- Two-dimensional hydrodynamic electron flow through periodic and random potentials