Carrier transport theory for twisted bilayer graphene in the metallic regime
arXiv:2003.00018 · doi:10.1038/s41467-021-25864-1
Abstract
Understanding the normal-metal state transport in twisted bilayer graphene near magic angle is of fundamental importance as it provides insights into the mechanisms responsible for the observed strongly correlated insulating and superconducting phases. Here we provide a rigorous theory for phonon-dominated transport in twisted bilayer graphene describing its unusual signatures in the resistivity (including the variation with electron density, temperature, and twist angle) showing good quantitative agreement with recent experiments. We contrast this with the alternative Planckian dissipation mechanism that we show is incompatible with available experimental data. An accurate treatment of the electron-phonon scattering requires us to go well beyond the usual treatment, including both interband and intraband processes, considering the finite-temperature dynamical screening of the electron-phonon matrix element, and going beyond the linear Dirac dispersion. In addition to explaining the observations in currently available experimental data, we make concrete predictions that can be tested in ongoing experiments.
25 pages, 15 figures
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Cited by in corpus (8)
- Quantum Criticality in Twisted Transition Metal Dichalcogenides
- Phonons in magic-angle twisted bilayer graphene
- Symmetry Origin of Lattice Vibration Modes in Twisted Multilayer Graphene: Phasons vs Moiré Phonons
- Strange Metals from Melting Correlated Insulators in Twisted Bilayer Graphene
- Temperature-linear Resistivity in Twisted Double Bilayer Graphene
- Generating coherent phonon waves in narrow-band materials: a twisted bilayer graphene phaser
- Optical Control of Slow Topological Electrons in Moiré Systems
- Joule heating in bad and slow metals