Graphene Transport at High Carrier Densities using a Polymer Electrolyte Gate

Abstract

We report the study of graphene devices in Hall-bar geometry, gated with a polymer electrolyte. High densities of 6 $\times 10^{13}/c{m}^2$ are consistently reached, significantly higher than with conventional back-gating. The mobility follows an inverse dependence on density, which can be correlated to a dominant scattering from weak scatterers. Furthermore, our measurements show a Bloch-Grüneisen regime until 100 K (at 6.2 $\times 10^{13}/c{m}^2$), consistent with an increase of the density. Ubiquitous in our experiments is a small upturn in resistivity around 3 $\times 10^{13}/c{m}^2$, whose origin is discussed. We identify two potential causes for the upturn: the renormalization of Fermi velocity and an electrochemically-enhanced scattering rate.

13 pages, 4 figures, Published Version

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• Surface polar optical phonon interaction induced many-body effects and hot-electron relaxation in graphene
• Chirality-dependent phonon-limited resistivity in multiple layers of graphene
• Nonlinear photocurrents in two-dimensional systems based on graphene and boron nitride
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• Weak Localization in Electric-Double-Layer Gated Few-layer Graphene
• Enhanced Optical Dichroism of Graphene Nanoribbons
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• Inelastic carrier lifetime in a coupled graphene electron-phonon system: Role of plasmon-phonon coupling
• Intrinsic and extrinsic effects on intraband optical conductivity of hot carriers in photoexcited graphene