Mobility enhancement and highly efficient gating of monolayer MoS2 transistors with Polymer Electrolyte

Abstract

We report electrical characterization of monolayer molybdenum disulfide (MoS2) devices using a thin layer of polymer electrolyte consisting of poly(ethylene oxide) (PEO) and lithium perchlorate (LiClO4) as both a contact-barrier reducer and channel mobility booster. We find that bare MoS2 devices (without polymer electrolyte) fabricated on Si/SiO2 have low channel mobility and large contact resistance, both of which severely limit the field-effect mobility of the devices. A thin layer of PEO/ LiClO4 deposited on top of the devices not only substantially reduces the contact resistance but also boost the channel mobility, leading up to three-orders-of-magnitude enhancement of the field-effect mobility of the device. When the polymer electrolyte is used as a gate medium, the MoS2 field-effect transistors exhibit excellent device characteristics such as a near ideal subthreshold swing and an on/off ratio of 106 as a result of the strong gate-channel coupling.

17 pages, 4 figures, accepted by J. Phys. D

References in corpus (12)

• Electric Field Effect in Atomically Thin Carbon Films
• Two Dimensional Atomic Crystals
• Ultrahigh electron mobility in suspended graphene
• Boron nitride substrates for high-quality graphene electronics
• Anomalous Lattice Vibrations of Single and Few-Layer MoS2
• Electrochemically Top Gated Graphene: Monitoring Dopants by Raman Scattering
• Single-Layer MoS2 Phototransistors
• Suspended Graphene: a bridge to the Dirac point
• Temperature dependent transport in suspended graphene
• The Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors
• MoS2 Dual-Gate MOSFET with Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric
• Graphene Transport at High Carrier Densities using a Polymer Electrolyte Gate

Cited by in corpus (15)

• Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
• Bandgap Engineering of Strained Monolayer and Bilayer MoS2
• Mobility engineering and metal-insulator transition in monolayer MoS2
• Three-band tight-binding model for monolayers of group-VIB transition metal dichalcogenides
• High Mobility Ambipolar MoS2 Field-Effect Transistors: Substrate and Dielectric Effects
• Measurement of mobility in dual-gated MoS2 transistors
• High Mobility WSe2 p- and n-Type Field Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts
• Band-Like Transport in High Mobility Unencapsulated Single-Layer MoS2 Transistors
• Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors
• Fast and Highly Sensitive Ionic Polymer Gated WS${}_2$-Graphene Photodetectors
• Plasmons and screening in a monolayer of MoS${}_2$
• Mobility enhancement and temperature dependence in top-gated single-layer MoS2
• Charge transport in ion-gated mono-, bi-, and trilayer MoS2 field effect transistors
• Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS2 Field Effect Transistors
• Scattering in Monolayer Molybdenum Disulfide Quantum Dot