The Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors

Abstract

We present low temperature electrical transport experiments in five field effect transistor devices consisting of monolayer, bilayer and trilayer MoS2 films, mechanically exfoliated onto Si/SiO2 substrate. Our experiments reveal that the electronic states in all films are localized well up to the room temperature over the experimentally accessible range of gate voltage. This manifests in two dimensional (2D) variable range hopping (VRH) at high temperatures, while below \sim 30 K the conductivity displays oscillatory structures in gate voltage arising from resonant tunneling at the localized sites. From the correlation energy (T0) of VRH and gate voltage dependence of conductivity, we suggest that Coulomb potential from trapped charges in the substrate are the dominant source of disorder in MoS2 field effect devices, which leads to carrier localization as well.

10 pages, 5 figures; ACS Nano (2011)

References in corpus (5)

• Electric Field Effect in Atomically Thin Carbon Films
• Two Dimensional Atomic Crystals
• Anomalous Lattice Vibrations of Single and Few-Layer MoS2
• Boltzmann transport and residual conductivity in bilayer graphene
• Theory of charged impurity scattering in two dimensional graphene

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