Hall and field-effect mobilities in few layered $p$-WSe${}_2$ field-effect transistors

Abstract

Here, we present a temperature ($T$) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe${}_2$ exfoliated onto SiO${}_2$. Without dielectric engineering and beyond a $T$-dependent threshold gate-voltage, we observe maximum hole mobilities approaching 350 cm${}^2$/Vs at $T$=300 K. The hole Hall mobility reaches a maximum value of 650 cm${}^2$/Vs as $T$ is lowered below $\sim$ 150 K, indicating that insofar WSe${}_2$-based field-effect transistors (FETs) display the largest Hall mobilities among the transition metal dichalcogenides. The gate capacitance, as extracted from the Hall-effect, reveals the presence of spurious charges in the channel, while the two-terminal sheet resistivity displays two-dimensional variable-range hopping behavior, indicating carrier localization induced by disorder at the interface between WSe${}_2$ and SiO${}_2$. We argue that improvements in the fabrication protocols as, for example, the use of a substrate free of dangling bonds are likely to produce WSe${}_2$-based FETs displaying higher room temperature mobilities, i.e. approaching those of $p$-doped Si, which would make it a suitable candidate for high performance opto-electronics.

arXiv comment35 pages including supplementary information. 7 figures in main text, 4 figures in supplementary file

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• Universal low-density power laws of the dc conductivity and Hall constant in the self-consistent Born approximation