Multi-terminal electronic transport in boron nitride encapsulated TiS${}_3$ nanosheets

Abstract

We have studied electrical transport as a function of carrier density, temperature and bias in multi-terminal devices consisting of hexagonal boron nitride (h-BN) encapsulated titanium trisulfide (TiS${}_3$) sheets. Through the encapsulation with h-BN, we observe metallic behavior and high electron mobilities. Below $\sim$60 K an increase in the resistance, and non-linear transport with plateau-like features in the differential resistance are present, in line with the expected charge density wave (CDW) formation. Importantly, the critical temperature and the threshold field of the CDW phase can be controlled through the back-gate.

References in corpus (10)

• High quality sandwiched black phosphorus heterostructure and its quantum oscillations
• Controlling many-body states by the electric-field effect in a two-dimensional material
• Influence of Stoichiometry on the Optical and Electrical Properties of Chemical Vapor Deposition Derived MoS${}_2$
• Titanium trisulfide monolayer: A new direct-gap semiconductor with high and anisotropic carrier mobility
• TiS3 transistors with tailored morphology and electrical properties
• Ultrahigh photoresponse of few-layer TiS3 nanoribbon transistors
• One-dimensional conduction in Charge-Density Wave nanowires
• Hall and field-effect mobilities in few layered $p$-WSe${}_2$ field-effect transistors
• NbS${}_3$: A unique quasi one-dimensional conductor with three charge density wave transitions
• Weak localization in boron nitride encapsulated bilayer MoS${}_2$

Cited by in corpus (1)

• Interlayer excitonic insulator in two-dimensional double-layer semiconductor junctions: An explicitly solvable model