Titanium trisulfide (TiS3): a 2D semiconductor with quasi-1D optical and electronic properties

Abstract

We present characterizations of few-layer titanium trisulfide (TiS3) flakes which, due to their reduced in-plane structural symmetry, display strong anisotropy in their electrical and optical properties. Exfoliated few-layer flakes show marked anisotropy of their in-plane mobilities reaching ratios as high as 7.6 at low temperatures. Based on the preferential growth axis of TiS3 nanoribbons, we develop a simple method to identify the in-plane crystalline axes of exfoliated few-layer flakes through angle resolved polarization Raman spectroscopy. Optical transmission measurements show that TiS3 flakes display strong linear dichroism with a magnitude (transmission ratios up to 30) much greater than that observed for other anisotropic two-dimensional (2D) materials. Finally, we calculate the absorption and transmittance spectra of TiS3 in the random-phase-approximation (RPA) and find that the calculations are in good agreement with the observed experimental optical transmittance.

18 pages, 4 figures, including Supporting Information (6 pages, 6 figures)

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• Dielectrophoretic assembly of liquid-phase-exfoliated TiS3 nanoribbons for photodetecting applications
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• Raman Fingerprint of Pressure-Induced Phase Transitions in TiS3 Nanoribbons: Implications for Thermal Measurements under Extreme Stress Conditions
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• Tunable Photodetectors via in situ Thermal Conversion of TiS${}_3$ to TiO${}_2$
• Excitonic complexes in anisotropic atomically thin two-dimensional materials: black phosphorus and TiS${}_3$
• Graphene-TiS${}_3$ heterojunction for selective polar vapor sensing at room temperature
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