Integrated Digital Inverters Based on Two-dimensional Anisotropic ReS2 Field-effect Transistors

Abstract

Semiconducting two-dimensional (2D) transition metal dichalcogenides (TMDs) are emerging as top candidates for post-silicon electronics. While most of 2D TMDs exhibit isotropic behavior, lowering the lattice symmetry could induce anisotropic properties, which are both scientifically interesting and potentially useful. Here, we present atomically thin rhenium disulfide (ReS2) flakes with a unique distorted 1T structure, which exhibit in-plane anisotropic properties. We fabricated mono- and few-layer ReS2 field effect transistors (FETs), which exhibit competitive performance with large current on/off ratios (~107) and low subthreshold swings (100 mV dec-1). The observed anisotropic ratio along two principle axes reaches 3.1, which is the highest among all known 2D semiconducting materials. Furthermore, we successfully demonstrated an integrated digital inverter with good performance by utilizing two ReS2 anisotropic FETs, suggesting the promising implementation of large-scale 2D logic circuits. Our results underscore the unique properties of 2D semiconducting materials with low crystal symmetry for future electronic applications.

accepted by Nature Communications; 23 pages, 4 figures

References in corpus (5)

• Integrated Circuits Based on Bilayer MoS2 Transistors
• Titanic Magnetoresistance in WTe2
• Fluorographene: Two Dimensional Counterpart of Teflon
• Towards Intrinsic Charge Transport in Monolayer Molybdenum Disulfide by Defect and Interface Engineering
• Raman vibrational spectra of bulk to monolayer ReS2 with lower symmetry

Cited by in corpus (61)

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• Recent Advances in Two-Dimensional Metal Monochalcogenides
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• 2-D materials for ultra-scaled field-effect transistors: hundred candidates under the ab initio microscope
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• Pressure-induced metallization and superconducting phase in ReS2
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• Anisotropic properties of monolayer 2D materials: an overview from the C2DB database
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• Temperature effect on lattice and electronic structures of WTe${}_2$ from first-principles study
• Doping controlled Fano resonance in bilayer 1T${}^{\prime }$-ReS${}_2$: Raman experiments and first-principles theoretical analysis
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• In-Plane Anisotropy-Driven Directional Charge Transport in van der Waals p-n Heterojunction
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