Interplay of crystal thickness and in-plane anisotropy and evolution of quasi-one dimensional electronic character in ReSe${}_2$

Abstract

We study the valence band structure of ReSe${}_2$ crystals with varying thickness down to a single layer using nanoscale angle-resolved photoemission spectroscopy and density functional theory. The width of the top valence band in the direction perpendicular to the rhenium chains decreases with decreasing number of layers, from 280 meV for the bulk to 61 meV for monolayer. This demonstrates increase of in-plane anisotropy induced by changes in the interlayer coupling and suggests progressively more one-dimensional character of electronic states in few-layer rhenium dichalcogenides.

References in corpus (23)

• Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
• Making graphene visible
• Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2
• Broadband Linear-Dichroic Photodetector in a Black Phosphorus Vertical p-n Junction
• Integrated Digital Inverters Based on Two-dimensional Anisotropic ReS2 Field-effect Transistors
• Band structure of MoS_2, MoSe_2, and alpha-MoTe_2: Angle-resolved photoelectron spectroscopy and ab-initio calculations
• Hidden spin polarization in inversion-symmetric bulk crystals
• Structural Semiconductor-to-Semimetal Phase Transition in Two-Dimensional Materials Induced by Electrostatic Gating
• Direct observation of spin-polarised bulk bands in an inversion-symmetric semiconductor
• Ubiquitous formation of bulk Dirac cones and topological surface states from a single orbital manifold in transition-metal dichalcogenides
• Generation and evolution of spin-, valley- and layer-polarized excited carriers in inversion-symmetric WSe2
• Interlayer Interactions in Anisotropic Atomically-thin Rhenium Diselenide
• Quasiparticle Band Gaps, Excitonic Effects, and Anisotropic Optical Properties of Monolayer Distorted 1-T Diamond-chain Structures
• Tunable Quasiparticle Band Gap in Few Layer GaSe/graphene Van der Waals Heterostructures
• Spin-valley locking in the normal state of a transition-metal dichalocogenide superconductor
• Indirect to direct gap crossover in two-dimensional InSe revealed by ARPES
• Direct observation of the band gap transition in atomically thin ReS${}_2$
• Search and design of nonmagnetic centrosymmetric layered crystals with large local spin polarization
• Electronic bandstructure of ReS2 by high resolution angle resolved photoemission spectroscopy
• Narrow-band anisotropic electronic structure of ReS${}_2$
• Electronic bandstructure and van der Waals coupling of ReSe2 revealed by high-resolution angle-resolved photoemission spectroscopy
• Visualizing Orbital Content of Electronic Bands in Anisotropic 2D Semiconducting ReSe${}_2$
• Electronic band structure of rhenium dichalcogenides

Cited by in corpus (2)

• Spectrally resolving the phase and amplitude of coherent phonons in the charge density wave state of 1$T$-TaSe${}_2$
• Using in-plane anisotropy to engineer Janus monolayers of rhenium dichalcogenides