Electronic band structure of rhenium dichalcogenides

Abstract

The band structures of bulk transition metal dichalcogenides ReS2 and ReSe2 are presented, showing the complicated nature of the interband transitions in these materials, with several close-lying band gaps. Three-dimensional plots of constant energy surfaces in the Brillouin zone at energies near the band extrema are used to show that the valence band maximum and conduction band minimum may not be located at special high symmetry points. We find that both materials are indirect gap materials and that one must be careful to consider the whole Brillouin zone volume in addressing this question.

References in corpus (9)

• Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
• Two Dimensional Atomic Crystals
• Integrated Digital Inverters Based on Two-dimensional Anisotropic ReS2 Field-effect Transistors
• Graphene Versus MoS2: a Short Review
• Interlayer Interactions in Anisotropic Atomically-thin Rhenium Diselenide
• Direct observation of the band gap transition in atomically thin ReS${}_2$
• Electronic bandstructure of ReS2 by high resolution angle resolved photoemission spectroscopy
• Narrow-band anisotropic electronic structure of ReS${}_2$
• Electronic bandstructure and van der Waals coupling of ReSe2 revealed by high-resolution angle-resolved photoemission spectroscopy

Cited by in corpus (6)

• Pressure dependence of direct optical transitions in ReS2 and ReSe2
• Visualizing Orbital Content of Electronic Bands in Anisotropic 2D Semiconducting ReSe${}_2$
• Interplay of crystal thickness and in-plane anisotropy and evolution of quasi-one dimensional electronic character in ReSe${}_2$
• Using in-plane anisotropy to engineer Janus monolayers of rhenium dichalcogenides
• Exchange-split multiple Rydberg series of excitons in anisotropic quasi two-dimensional ReS${}_2$
• High refractive index and extreme biaxial optical anisotropy of rhenium diselenide for applications in all-dielectric nanophotonics