Theory of polarization-switchable electrical conductivity anisotropy in nonpolar semiconductors

Abstract

The anisotropic propagation of particles is a fundamental transport phenomenon in solid state physics. As for crystalline semiconductors, the anisotropic charge transport opens novel designing routes for electronic devices, where the electrical or magnetic manipulation of anisotropic resistance provides essential guarantees. Motivated by the concept of anisotropic magnetoresistance, we develop an original theory on the electrically manipulatable anisotropic electroresistance. We show that piezoelectrics and ferroelectrics may showcase polarization-dependent anisotropic electrical conductivities between two perpendicular directions and the electrical conductivity anisotropy (ECA) is switchable by flipping the polarization. By symmetry analysis, we identify several point groups hosting the polarization-switchable ECA. These point groups simultaneously enable polarization-reversal induced conductivity change along specific directions, akin to the tunnelling electroresistance in ferroelectric tunnel junctions. First-principles-based conductivity calculations predict that piezoelectric AlP and ferroelectric KH${}_2$PO${}_4$ are two good semiconductors having such exotic charge transport. Our theory can motivate the design of intriguing anisotropic electronic devices (e.g., anisotropic memristor and field effect transistor).

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References in corpus (22)

• Restoring the density-gradient expansion for exchange in solids and surfaces
• Generalized gradient approximation for solids and their surfaces
• Rediscovering Black Phosphorus: A Unique Anisotropic 2D Material for Optoelectronics and Electronics
• Antiferromagnetic spintronics
• Antiferromagnetic spintronics
• BoltzTraP2, a program for interpolating band structures and calculating semi-classical transport coefficients
• Electrical switching of an antiferromagnet
• Giant Electroresistance in Ferroelectric Tunnel Junctions
• Colossal electroresistance in metal/ferroelectric/semiconductor tunnel diodes for resistive switching memories
• Integrated Digital Inverters Based on Two-dimensional Anisotropic ReS2 Field-effect Transistors
• Strongly anisotropic spin relaxation in graphene/transition metal dichalcogenide heterostructures at room temperature
• Spin-orbit torques in Co/Pt(111) and Mn/W(001) magnetic bilayers from first principles
• High performance Wannier interpolation of Berry curvature and related quantities: WannierBerri code
• Gate tunable giant anisotropic resistance in ultra-thin GaTe
• Two-dimensional antiferroelectric tunnel junction
• Anisotropic magnetoresistance: materials, models and applications
• Intrinsic mechanism for anisotropic magnetoresistance and experimental confirmation in Co${}_x$Fe${}_{1-x}$ single-crystal films
• Giant anisotropic magnetoresistance and nonvolatile memory in canted antiferromagnet Sr2IrO4
• Meta-screening and permanence of polar distortion in metallized ferroelectrics
• Fourfold anisotropic magnetoresistance of L1${}_0$ FePt due to relaxation time anisotropy
• Highly anisotropic spin transport in ultrathin black phosphorus
• General theory for longitudinal nonreciprocal charge transport