Gate tunable giant anisotropic resistance in ultra-thin GaTe
arXiv:1901.04262 · doi:10.1038/s41467-019-10256-3
Abstract
In crystals, the duplication of atoms often follows different periodicity along different directions. It thus gives rise to the so called anisotropy, which is usually even more pronounced in two dimensional (2D) materials due to the absence of dimension. Indeed, in the emerging 2D materials, electrical anisotropy has been one of the focuses in recent experimental efforts. However, key understandings of the in-plane anisotropic resistance in low-symmetry 2D materials, as well as demonstrations of model devices taking advantage of it, have proven difficult. Here, we show that, in few-layered semiconducting GaTe, electrical conductivity along and directions of the 2D crystal can be gate tuned from a ratio of less than one order to as large as 10. This effect is further demonstrated to yield an anisotropic memory resistor behaviour in ultra-thin GaTe, when equipped with an architecture of van der Waals floating gate. Our findings of gate tunable giant anisotropic resistance (GAR) effect pave the way for potential applications in nano-electronics such as multifunctional directional memories in the 2D limit.
arXiv comment9 pages, 4 figures
References in corpus (13)
- Density functional method for nonequilibrium electron transport
- Rediscovering Black Phosphorus: A Unique Anisotropic 2D Material for Optoelectronics and Electronics
- Optimized norm-conserving Vanderbilt pseudopotentials
- Optimization Algorithm for the Generation of ONCV Pseudopotentials
- Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures
- Integrated Digital Inverters Based on Two-dimensional Anisotropic ReS2 Field-effect Transistors
- Electric-field control of magnetism in few-layered van der Waals magnet
- Anisotropic Magnetotransport and Exotic Longitudinal Linear Magnetoresistance in WTe2 Crystals
- Observation of Optical and Electrical In-plane Anisotropy in High-mobility Few-layer ZrTe5
- Raman Signatures of Broken Inversion Symmetry and In-plane Anisotropy in Type-II Weyl Semimetal Candidate TaIrTe4
- New two-dimensional phase of tin chalcogenides: candidates for high-performance thermoelectric materials
- Anisotropic resistivity and Hall effect in MgB2 single crystals
- Angle-resolved photoemission study and first principles calculation of the electronic structure of GaTe
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