Intrinsic mechanism for anisotropic magnetoresistance and experimental confirmation in CoFe single-crystal films
arXiv:2008.00872 · doi:10.1103/PhysRevLett.125.097201
Abstract
Using first-principles transport calculations, we predict that the anisotropic magnetoresistance (AMR) of single-crystal CoFe alloys is strongly dependent on the current orientation and alloy concentration. An intrinsic mechanism for AMR is found to arise from the band crossing due to magnetization-dependent symmetry protection. These special -points can be shifted towards or away from the Fermi energy by varying the alloy composition and hence the exchange splitting, thus allowing AMR tunability. The prediction is confirmed by delicate transport measurements, which further reveal a reciprocal relationship of the longitudinal and transverse resistivities along different crystal axes.
6 pages, 4 figures, Supplemental Materials available
References in corpus (8)
- Writing and Reading antiferromagnetic MnAu: Néel spin-orbit torques and large anisotropic magnetoresistance
- Conductance calculations for quantum wires and interfaces: mode matching and Green functions
- Rashba-Edelstein Magnetoresistance in Metallic Heterostructure
- Giant anisotropy of Gilbert damping in epitaxial CoFe films
- Angle-dependent magnetotransport in cubic and tetragonal ferromagnets: Application to (001)- and (113)A-oriented (Ga,Mn)As
- Advanced resistivity model for arbitrary magnetization orientation applied to a series of compressive- to tensile-strained (Ga,Mn)As layers
- Gilbert damping in noncollinear ferromagnets
- Observation of spin-orbit magnetoresistance in metallic thin films on magnetic insulators
Cited by in corpus (19)
- Anisotropic magnetoresistance: materials, models and applications
- Orbital Magneto-Nonlinear Anomalous Hall Effect in Kagome Magnet FeSn
- Fourfold anisotropic magnetoresistance of L1 FePt due to relaxation time anisotropy
- A theory for anisotropic magnetoresistance in materials with two vector order parameters
- Anisotropic galvanomagnetic effects in single-crystal Fe(001) films elucidated by a phenomenological theory
- Unconventional magneto-resistance, and electronic transition in MnGe Weyl semimetal
- Unusual anisotropic magnetoresistance due to magnetization-dependent spin-orbit interactions
- High-field magnetoresistance of microcrystalline and nanocrystalline Ni metal at 3 K and 300 K
- Orbital origin of fourfold anisotropic magnetoresistance in Dirac materials
- Giant Crystal Hall Effect in Collinear Antiferromagnetic -FeMn
- Giant Anisotropic Magnetoresistance in Magnetic Monolayers CrPX3 (X = S, Se, Te) due to symmetry breaking between the in-plane and out-of-plane crystallographic axes
- Quantum-well tunneling anisotropic magnetoresistance above room temperature
- Anisotropic magneto-resistance in MgO-based magnetic tunnel junctions induced by spin-orbit coupling
- Four-fold Anisotropic Magnetoresistance in Antiferromagnetic Epitaxial Thin Films of MnPtPd
- Effect of atomic anti-site disorder on the AMR in FeCo alloys
- Theory and Experiment of Chirality-induced Magnetic Nonreciprocity Manifested by Coupling Phase
- Theory of polarization-switchable electrical conductivity anisotropy in nonpolar semiconductors
- Symmetry-forbidden intraband transitions leading to ultralow Gilbert damping in van der Waals ferromagnets
- Magnetization reversal and anisotropies in buffered transition-metal alloys thin films