Anisotropic magneto-resistance in MgO-based magnetic tunnel junctions induced by spin-orbit coupling
arXiv:2202.07264 · doi:10.1103/PhysRevB.106.094406
Abstract
We performed a first-principles study of the tunneling anisotropic magneto-resistance (TAMR) in Ag(Ir,Pt)MgOFe junctions. Enhanced TAMR with ideal and skewed fourfold angular dependence is found in-plane and out-of-plane TAMR of the system, respectively, which shows simple barrier thickness dependency with number around 10\% in some junctions. The complex angular dependency of the interfacial resonant states due to the spin-orbit coupling should be responsible to the complex and enhanced TAMR found in these junctions.
6 pages, 8 figures
References in corpus (4)
- Anisotropic tunneling magnetoresistance and tunneling anisotropic magnetoresistance: spin-orbit coupling in magnetic tunnel junctions
- Tunneling anisotropic magnetoresistance driven by resonant surface states: First-principles calculations of Fe(001) surface
- Intrinsic mechanism for anisotropic magnetoresistance and experimental confirmation in CoFe single-crystal films
- Fourfold anisotropic magnetoresistance of L1 FePt due to relaxation time anisotropy