paper

Anisotropic magneto-resistance in MgO-based magnetic tunnel junctions induced by spin-orbit coupling

arXiv:2202.07264 · doi:10.1103/PhysRevB.106.094406

Abstract

We performed a first-principles study of the tunneling anisotropic magneto-resistance (TAMR) in Ag(Ir,Pt)MgOFe junctions. Enhanced TAMR with ideal and skewed fourfold angular dependence is found in-plane and out-of-plane TAMR of the system, respectively, which shows simple barrier thickness dependency with number around 10\% in some junctions. The complex angular dependency of the interfacial resonant states due to the spin-orbit coupling should be responsible to the complex and enhanced TAMR found in these junctions.

6 pages, 8 figures

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