Fourfold anisotropic magnetoresistance of L1${}_0$ FePt due to relaxation time anisotropy

Abstract

Experimental measurements show that the angular dependence of the anisotropic magnetoresistance (AMR) in L1${}_0$ ordered FePt epitaxial films on the current orientation and magnetization direction is a superposition of the corresponding dependences of twofold and fourfold symmetries. The twofold AMR exhibits a strong dependence on the current orientation, whereas the fourfold term only depends on the magnetization direction in the crystal and is independent of the current orientation. First-principles calculations reveal that the fourfold AMR arises from the relaxation time anisotropy due to the variation of the density of states near the Fermi energy under rotation of the magnetization. This relaxation time anisotropy is a universal property in ferromagnetic metals and determines other anisotropic physical properties that are observable in experiment.

6 pages, 5 figures

References in corpus (9)

• Identification of the dominant precession damping mechanism in Fe, Co, and Ni by first-principles calculations
• Scaling of intrinsic Gilbert damping with spin-orbital coupling strength
• Rashba-Edelstein Magnetoresistance in Metallic Heterostructure
• Anisotropic Magnetoresistance components in (Ga,Mn)As
• Giant anisotropy of Gilbert damping in epitaxial CoFe films
• Angle-dependent magnetotransport in cubic and tetragonal ferromagnets: Application to (001)- and (113)A-oriented (Ga,Mn)As
• Intrinsic mechanism for anisotropic magnetoresistance and experimental confirmation in Co${}_x$Fe${}_{1-x}$ single-crystal films
• Observation of spin-orbit magnetoresistance in metallic thin films on magnetic insulators
• Broadband terahertz probes of anisotropic magnetoresistance disentangle extrinsic and intrinsic contributions

Cited by in corpus (9)

• Finite-momentum Cooper pairing in proximitized altermagnets
• Anisotropic galvanomagnetic effects in single-crystal Fe(001) films elucidated by a phenomenological theory
• Orbital origin of fourfold anisotropic magnetoresistance in Dirac materials
• Giant Anisotropic Magnetoresistance in Magnetic Monolayers CrPX3 (X = S, Se, Te) due to symmetry breaking between the in-plane and out-of-plane crystallographic axes
• Four-fold Anisotropic Magnetoresistance in Antiferromagnetic Epitaxial Thin Films of MnPt${}_x$Pd${}_{1-x}$
• Anisotropic magneto-resistance in MgO-based magnetic tunnel junctions induced by spin-orbit coupling
• Effect of atomic anti-site disorder on the AMR in FeCo alloys
• Theory of polarization-switchable electrical conductivity anisotropy in nonpolar semiconductors
• Engineering magnetic anisotropy and ferromagnetism in topological Kagome metal GdV6Sn6 via Nd substitution