Twofold and Fourfold Symmetric Anisotropic Magnetoresistance Effect in A Model with Crystal Field
arXiv:1507.05912 · doi:10.7566/JPSJ.84.094710
Abstract
We theoretically study the twofold and fourfold symmetric anisotropic magnetoresistance (AMR) effects of ferromagnets. We here use the two-current model for a system consisting of a conduction state and localized d states. The localized d states are obtained from a Hamiltonian with a spin--orbit interaction, an exchange field, and a crystal field. From the model, we first derive general expressions for the coefficient of the twofold symmetric term () and that of the fourfold symmetric term () in the AMR ratio. In the case of a strong ferromagnet, the dominant term in is proportional to the difference in the partial densities of states (PDOSs) at the Fermi energy () between the and states, and that in is proportional to the difference in the PDOSs at among the states. Using the dominant terms, we next analyze the experimental results for FeN, in which and increase with decreasing temperature. The experimental results can be reproduced by assuming that the tetragonal distortion increases with decreasing temperature.
42 pages, 11 figures, to be published in J. Phys. Soc. Jpn. Vol. 84 (2015) No. 9, minor mistakes corrected
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