Moiré patterns in graphene -- rhenium disulfide vertical heterostructures

Abstract

Vertical stacking of atomically thin materials offers a large platform for realizing novel properties enabled by proximity effects and moiré patterns. Here we focus on mechanically assembled heterostructures of graphene and ReS${}_2$, a van der Waals layered semiconductor. Using scanning tunneling microscopy and spectroscopy (STM/STS) we image the sharp edge between the two materials as well as areas of overlap. Locally resolved topographic images revealed the presence of a striped superpattern originating in the interlayer interactions between graphene's hexagonal structure and the triclinic, low in-plane symmetry of ReS${}_2$. We compare the results with a theoretical model that estimates the shape and angle dependence of the moiré pattern between graphene and ReS${}_2$. These results shed light on the complex interface phenomena between van der Waals materials with different lattice symmetries.

arXiv comment8 pages, 4 figures

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Cited by in corpus (4)

• Analytical Model for Atomic Relaxation in Twisted Moiré Materials
• Giant Transport Anisotropy in ReS${}_2$ Revealed via Nanoscale Conducting Path Control
• Beyond Graphene: Low-Symmetry and Anisotropic 2D Materials
• Prevalence of oxygen defects in an in-plane anisotropic transition metal dichalcogenide