174 citations · 432 across the 20 of their papers we have counts for
21 papers
Establishing the role of thickness in LaOBr; an alternative gate dielectric for vdW heterostructures
Isaac Antoine Lagaud, Justin Boddison-Chouinard, Antoine Labbé +9
In electronic devices, the quality of the dielectric material is determined by figures of merit such as the band gap, leakage onset field, breakdown field and the number of built-i…
Visualization of Defect Electronic States in Layered Semiconductor CrSBr
Jonathan Brunette, Joost Aretz, Kiyoung Jo +5
Chromium sulfur bromide (CrSBr) is a layered magnetic semiconducting material combining a rich magnetic phase diagram with axis-dependent electronic and optical properties. While d…
Locally resolved electronic textures of reconstruction domains in marginally twisted monolayer-bilayer graphene
Sean M. Walker, Patrick Sarsfield, Isaac Soltero +7
Controlling the stacking and rotational registry of graphene layers provides a powerful handle on atomic-scale structural reconstructions that alter the electronic landscape at the…
Valley-spin polarization at zero magnetic field induced by strong hole-hole interactions in monolayer WSe
Justin Boddison-Chouinard, Marek Korkusinski, Alex Bogan +9
Monolayer transition metal dichalcogenides have emerged as prominent candidates to explore the complex interplay between the spin and the valleys degrees of freedom. The strong spi…
Interacting holes in a gated WSe quantum channel: valley correlations and zigzag Wigner crystal
Jarosław Pawłowski, Daniel Miravet, Maciej Bieniek +5
We present a theory of interacting valence holes in a gate-defined one-dimensional quantum channel in a single layer of a transition metal dichalcogenide material WSe. Based on…
Orbital perspective on high-harmonic generation from solids
Á. Jiménez-Galán, C. Bossaer, G. Ernotte +7
High-harmonic generation in solids allows probing and controlling electron dynamics in crystals on few femtosecond timescales, paving the way to lightwave electronics. In the spati…
Influence of atomic relaxations on the moiré flat band wavefunctions in antiparallel twisted bilayer WS
Laurent Molino, Leena Aggarwal, Indrajit Maity +3
Twisting bilayers of transition metal dichalcogenides (TMDs) gives rise to a periodic moiré potential resulting in flat electronic bands with localized wavefunctions and enhanced c…
Ferroelectric switching at symmetry-broken interfaces by local control of dislocation networks
Laurent Molino, Leena Aggarwal, Vladimir Enaldiev +3
Semiconducting ferroelectric materials with low energy polarisation switching offer a platform for next-generation electronics such as ferroelectric field-effect transistors. Ferro…
Temperature-driven changes in the Fermi surface of graphite
Laxman R. Thoutam, Samuel E. Pate, Tingting Wang +7
We report on temperature-dependent size and anisotropy of the Fermi pockets in graphite revealed by magnetotransport measurements. The magnetoresistances obtained in fields along t…
Charge detection using a WSe van der Waals heterostructure
Justin Boddison-Chouinard, Alex Bogan, Norman Fong +6
Detecting single charging events in quantum devices is an important step towards realizing practical quantum circuits for quantum information processing. In this work, we demonstra…
Gate controlled quantum dots in monolayer WSe2
Justin Boddison-Chouinard, Alex Bogan, Norman Fong +10
Quantum confinenement and manipulation of charge carriers are critical for achieving devices practical for quantum technologies. The interplay between electron spin and valley, as…
Flattening van der Waals heterostructure interfaces by local thermal treatment
Adina Luican-Mayer, Justin Boddison-Chouinard, Samantha Scarfe +2
Fabrication of custom-built heterostructures based on stacked 2D materials provides an effective method to controllably tune electronic and optical properties. To that end, optimiz…
Moiré patterns in graphene -- rhenium disulfide vertical heterostructures
Ryan Plumadore, Mohammed M. Al Ezzi, Shaffique Adam +1
Vertical stacking of atomically thin materials offers a large platform for realizing novel properties enabled by proximity effects and moiré patterns. Here we focus on mechanically…
Prevalence of oxygen defects in an in-plane anisotropic transition metal dichalcogenide
Ryan Plumadore, Mehmet Baskurt, Justin Boddison-Chouinard +7
Atomic scale defects in semiconductors enable their technological applications and realization of novel quantum states. Using scanning tunneling microscopy and spectroscopy complem…
Mechanistic insight into the limiting factors of graphene-based environmental sensors
Jean-Michel Guay, Ranjana Rautela, Samantha Scarfe +11
Graphene has demonstrated great promise for technological use, yet control over material growth and understanding of how material imperfections affect the performance of devices ar…
Portable and wireless signal transducer for field testing of environmental sensors based on 2D materials
Nicholas Dallaire, Yicong Zhang, Xiangwen Deng +7
In this paper we present the design and fabrication of a portable device for environmental monitoring applications. This novel hand-held apparatus monitors the changes in the resis…
Localized electronic states at grain boundaries on the surface of graphene and graphite
Adina Luican-Mayer, Jose E. Barrios-Vargas, Jesper Toft Falkenberg +8
Recent advances in large-scale synthesis of graphene and other 2D materials have underscored the importance of local defects such as dislocations and grain boundaries (GBs), and es…
Origin of the turn-on temperature behavior in WTe
Y. L. Wang, L. R. Thoutam, Z. L. Xiao +8
A hallmark of materials with extremely large magnetoresistance (XMR) is the transformative 'turn-on' temperature behavior: when the applied magnetic field is above certain valu…
Suppression of charge density wave phases in ultrathin 1T-TaS2
Adina Luican-Mayer, Jeffrey R. Guest, Saw-Wai Hla
Using temperature dependent Raman spectroscopy we address the question of how the transition from bulk to few atomic layers affects the charge density wave (CDW) phases in 1T-TaS2.…
Local and Global Screening Properties of Graphene Revealed through Landau Level Spectroscopy
Chih-Pin Lu, Martin Rodriguez-Vega, Guohong Li +5
One-atom thick crystalline layers and their vertical heterostructures carry the promise of designer electronic materials that are unattainable by standard growth techniques. In ord…
Screening Charged Impurities and Lifting the Orbital Degeneracy in Graphene by Populating Landau Levels
Adina Luican-Mayer, Maxim Kharitonov, Guohong Li +7
We report the observation of an isolated charged impurity in graphene and present direct evidence of the close connection between the screening properties of a 2D electron system a…