Suppression of charge density wave phases in ultrathin 1T-TaS2
arXiv:1506.04102 · doi:10.1103/PhysRevB.100.165414
Abstract
Using temperature dependent Raman spectroscopy we address the question of how the transition from bulk to few atomic layers affects the charge density wave (CDW) phases in 1T-TaS2. We find that for crystals with thickness larger than approx 10nm the transition temperatures between the different phases as well as the hysteresis that occurs in the thermal cycle correspond to the ones expected for a bulk sample. However, when the crystals become thinner than , the commensurate CDW phase is suppressed down to the experimentally accessible temperatures. In addition, the nearly commensurate CDW phase is diminished below approx 4nm. These findings suggest that the interlayer coupling plays a significant role in determining the properties of CDW systems consisting of a few unit cells in the vertical direction.
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Cited by in corpus (6)
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- Probing charge density wave phases and the Mott transition in -TaS by inelastic light scattering
- Emergent quantum phenomena in two-dimensional 1T-TaS2
- Strongly Enhanced Charge-Density Waves and Correlated Insulating State in Atomically Thin 1-TaS
- Raman scattering fingerprints of the charge density wave state in one-dimensional NbTe