Gate controlled quantum dots in monolayer WSe2

Abstract

Quantum confinenement and manipulation of charge carriers are critical for achieving devices practical for quantum technologies. The interplay between electron spin and valley, as well as the possibility to address their quantum states electrically and optically, make two-dimensional (2D) transition metal dichalcogenides an emerging platform for the development of quantum devices. In this work, we fabricate devices based on heterostructures of layered 2D materials, in which we realize gate-controlled tungsten diselenide (WSe2) hole quantum dots. We discuss the observed mesoscopic transport features related to the emergence of quantum dots in the WSe2 device channel, and we compare them to a theoretical model.

6 pages, 4 figures

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Cited by in corpus (8)

• Dielectrics for Two-Dimensional Transition Metal Dichalcogenide Applications
• Gate-Controlled Quantum Dots Based on Two-Dimensional Materials
• Spin-valley locking for in-gap quantum dots in a MoS2 transistor
• Coherent Charge Oscillations in a Bilayer Graphene Double Quantum Dot
• Non-Destructive Low-Temperature Contacts to MoS2 Nanoribbon and Nanotube Quantum Dots
• Tunable p-n junction barriers in few-electron bilayer graphene quantum dots
• Interacting holes in a gated WSe${}_2$ quantum channel: valley correlations and zigzag Wigner crystal
• Spin-valley qubits in gated quantum dots in a single layer of transition metal dichalcogenides