53 citations · 158 across the 7 of their papers we have counts for
8 papers
Establishing the role of thickness in LaOBr; an alternative gate dielectric for vdW heterostructures
Isaac Antoine Lagaud, Justin Boddison-Chouinard, Antoine Labbé +9
In electronic devices, the quality of the dielectric material is determined by figures of merit such as the band gap, leakage onset field, breakdown field and the number of built-i…
Valley-spin polarization at zero magnetic field induced by strong hole-hole interactions in monolayer WSe
Justin Boddison-Chouinard, Marek Korkusinski, Alex Bogan +9
Monolayer transition metal dichalcogenides have emerged as prominent candidates to explore the complex interplay between the spin and the valleys degrees of freedom. The strong spi…
Charge detection using a WSe van der Waals heterostructure
Justin Boddison-Chouinard, Alex Bogan, Norman Fong +6
Detecting single charging events in quantum devices is an important step towards realizing practical quantum circuits for quantum information processing. In this work, we demonstra…
Gate controlled quantum dots in monolayer WSe2
Justin Boddison-Chouinard, Alex Bogan, Norman Fong +10
Quantum confinenement and manipulation of charge carriers are critical for achieving devices practical for quantum technologies. The interplay between electron spin and valley, as…
Spin-orbit enabled quantum transport channels in a two-hole double quantum dot
Alex Bogan, Sergei Studenikin, Marek Korkusinski +7
We analyze experimentally and theoretically the transport spectra of a gated lateral GaAs double quantum dot containing two holes. The strong spin-orbit interaction present in the…
Landau-Zener-Stuckelberg-Majorana interferometry of a single hole
Alex Bogan, Sergei Studenikin, Marek Korkusinski +6
We perform Landau-Zener-Stuckelberg-Majorana (LZSM) spectroscopy on a system with strong spin-orbit interaction (SOI), realized as a single hole confined in a gated double quantum…