activity
20052026
most citedStability Diagram of a Few-Electron Triple Dot

271 citations · 1.7k across the 26 of their papers we have counts for

collaborators

24 papers

cond-mat.mes-hall2026

Valleytronics in 2D Materials Roadmap

Kyle L. Seyler, Giancarlo Soavi, Bent Weber +30

Valleytronics exploits non-equivalent energy extrema in the electronic band structure of crystalline solids -- the valley degree of freedom -- to encode, manipulate, and read out i…

cond-mat.mes-hall2024

Valley-spin polarization at zero magnetic field induced by strong hole-hole interactions in monolayer WSe

Justin Boddison-Chouinard, Marek Korkusinski, Alex Bogan +9

Monolayer transition metal dichalcogenides have emerged as prominent candidates to explore the complex interplay between the spin and the valleys degrees of freedom. The strong spi…

cond-mat.mes-hall2024★ 4 cited

Interacting holes in a gated WSe quantum channel: valley correlations and zigzag Wigner crystal

Jarosław Pawłowski, Daniel Miravet, Maciej Bieniek +5

We present a theory of interacting valence holes in a gate-defined one-dimensional quantum channel in a single layer of a transition metal dichalcogenide material WSe. Based on…

cond-mat.mes-hall2022★ 1 cited

Charge detection using a WSe van der Waals heterostructure

Justin Boddison-Chouinard, Alex Bogan, Norman Fong +6

Detecting single charging events in quantum devices is an important step towards realizing practical quantum circuits for quantum information processing. In this work, we demonstra…

cond-mat.mes-hall2021

Electron g-factor determined for quantum dot circuit fabricated from (110)-oriented GaAs quantum well

T. Nakagawa, S. Lamoureux, T. Fujita +8

The choice of substrate orientation for semiconductor quantum dot circuits offers opportunities for tailoring spintronic properties such as g-factors for specific functionality. In…

cond-mat.mes-hall2021★ 28 cited

Gate controlled quantum dots in monolayer WSe2

Justin Boddison-Chouinard, Alex Bogan, Norman Fong +10

Quantum confinenement and manipulation of charge carriers are critical for achieving devices practical for quantum technologies. The interplay between electron spin and valley, as…