271 citations · 1.7k across the 26 of their papers we have counts for
23 papers · 1 filter
Establishing the role of thickness in LaOBr; an alternative gate dielectric for vdW heterostructures
Isaac Antoine Lagaud, Justin Boddison-Chouinard, Antoine Labbé +9
In electronic devices, the quality of the dielectric material is determined by figures of merit such as the band gap, leakage onset field, breakdown field and the number of built-i…
Valleytronics in 2D Materials Roadmap
Kyle L. Seyler, Giancarlo Soavi, Bent Weber +30
Valleytronics exploits non-equivalent energy extrema in the electronic band structure of crystalline solids -- the valley degree of freedom -- to encode, manipulate, and read out i…
Valley-spin polarization at zero magnetic field induced by strong hole-hole interactions in monolayer WSe
Justin Boddison-Chouinard, Marek Korkusinski, Alex Bogan +9
Monolayer transition metal dichalcogenides have emerged as prominent candidates to explore the complex interplay between the spin and the valleys degrees of freedom. The strong spi…
Interacting holes in a gated WSe quantum channel: valley correlations and zigzag Wigner crystal
Jarosław Pawłowski, Daniel Miravet, Maciej Bieniek +5
We present a theory of interacting valence holes in a gate-defined one-dimensional quantum channel in a single layer of a transition metal dichalcogenide material WSe. Based on…
Charge detection using a WSe van der Waals heterostructure
Justin Boddison-Chouinard, Alex Bogan, Norman Fong +6
Detecting single charging events in quantum devices is an important step towards realizing practical quantum circuits for quantum information processing. In this work, we demonstra…
Electron g-factor determined for quantum dot circuit fabricated from (110)-oriented GaAs quantum well
T. Nakagawa, S. Lamoureux, T. Fujita +8
The choice of substrate orientation for semiconductor quantum dot circuits offers opportunities for tailoring spintronic properties such as g-factors for specific functionality. In…
Gate controlled quantum dots in monolayer WSe2
Justin Boddison-Chouinard, Alex Bogan, Norman Fong +10
Quantum confinenement and manipulation of charge carriers are critical for achieving devices practical for quantum technologies. The interplay between electron spin and valley, as…
Spin-orbit enabled quantum transport channels in a two-hole double quantum dot
Alex Bogan, Sergei Studenikin, Marek Korkusinski +7
We analyze experimentally and theoretically the transport spectra of a gated lateral GaAs double quantum dot containing two holes. The strong spin-orbit interaction present in the…
Landau-Zener-Stuckelberg-Majorana interferometry of a single hole
Alex Bogan, Sergei Studenikin, Marek Korkusinski +6
We perform Landau-Zener-Stuckelberg-Majorana (LZSM) spectroscopy on a system with strong spin-orbit interaction (SOI), realized as a single hole confined in a gated double quantum…
Electro-mechanical control of an optical emitter using graphene
Antoine Reserbat-Plantey, Kevin G. Schädler, Louis Gaudreau +6
Active, in situ control of light at the nanoscale remains a challenge in modern physics and in nanophotonics in particular. A promising approach is to take advantage of the technol…
Electrical Control of Optical Emitter Relaxation Pathways enabled by Graphene
K. J. Tielrooij, L. Orona, A. Ferrier +16
Controlling the energy flow processes and the associated energy relaxation rates of a light emitter is of high fundamental interest, and has many applications in the fields of quan…
Ultrafast electronic read-out of diamond NV centers coupled to graphene
Andreas Brenneis, Louis Gaudreau, Max Seifert +6
Nonradiative transfer processes are often regarded as loss channels for an optical emitter1, since they are inherently difficult to be experimentally accessed. Recently, it has bee…
Long-range spin transfer in triple quantum dots
R. Sánchez, G. Granger, L. Gaudreau +6
Tunneling in a quantum coherent structure is not restricted to only nearest neighbours. Hopping between distant sites is possible via the virtual occupation of otherwise avoided in…
Quantum interference and phonon-mediated back-action in lateral quantum dot circuits
G. Granger, D. Taubert, C. E. Young +11
Spin qubits have been successfully realized in electrostatically defined, lateral few-electron quantum dot circuits. Qubit readout typically involves spin to charge information con…
Universal Distance-Scaling of Non-radiative Energy Transfer to Graphene
L. Gaudreau, K. J. Tielrooij, G. E. D. K. Prawiroatmodjo +3
The near-field interaction between fluorescent emitters and graphene exhibits rich physics associated with local dipole-induced electromagnetic fields that are strongly enhanced du…
Hybrid graphene-quantum dot phototransistors with ultrahigh gain
Gerasimos Konstantatos, Michela Badioli, Louis Gaudreau +5
Graphene has emerged as a novel platform for opto-electronic applications and photodetector, but the inefficient conversion from light to current has so far been an important roadb…
Time Resolved Control of Electron Tunnelling Times and Single-shot Spin Readout in a Quantum Dot
L. Gaudreau, A. Kam, J. B. Kycia +5
We are pursuing a capability to perform time resolved manipulations of single spins in quantum dot circuits involving more than two quantum dots. In this paper, we demonstrate full…
Silencing noisy 2DEG wafers
L. Gaudreau, A. Kam, P. Zawadzki +5
Telegraphic noise is one of the most significant problems that arises when making sensitive measurements with lateral electrostatic devices. In this paper we demonstrate that a waf…
An electrostatically defined serial triple quantum dot charged with few electrons
D. Schröer, A. D. Greentree, L. Gaudreau +4
A serial triple quantum dot (TQD) electrostatically defined in a GaAs/AlGaAs heterostructure is characterized by using a nearby quantum point contact as charge detector. Ground sta…
Coherent Transport Through a Quadruple Point in a Few Electron Triple Dot
L. Gaudreau, A. S. Sachrajda, S. Studenikin +3
A few electron double electrostatic lateral quantum dot can be transformed into a few electron triple quantum dot by applying a different combination of gate voltages. Quadruple po…
Topological Hunds rules and the electronic properties of a triple lateral quantum dot molecule
Marek Korkusinski, Irene Puerto Gimenez, Pawel Hawrylak +3
We analyze theoretically and experimentally the electronic structure and charging diagram of three coupled lateral quantum dots filled with electrons. Using the Hubbard model and r…
Stability Diagram of a Few-Electron Triple Dot
Louis Gaudreau, Sergei Studenikin, Andy Sachrajda +5
Quantum dots are considered building blocks for future quantum information circuits. We present here experimental results on a quantum dot circuit consisting of three quantum dots…
The origin of switching noise in GaAs/AlGaAs lateral gated devices
M. Pioro-Ladrière, J. H. Davies, A. R. Long +7
We have studied the origin of switching (telegraph) noise at low temperature in lateral quantum structures defined electrostatically in GaAs/AlGaAs heterostructures by surface gate…