31 citations · 78 across the 8 of their papers we have counts for
9 papers
Establishing the role of thickness in LaOBr; an alternative gate dielectric for vdW heterostructures
Isaac Antoine Lagaud, Justin Boddison-Chouinard, Antoine Labbé +9
In electronic devices, the quality of the dielectric material is determined by figures of merit such as the band gap, leakage onset field, breakdown field and the number of built-i…
Valleytronics in 2D Materials Roadmap
Kyle L. Seyler, Giancarlo Soavi, Bent Weber +30
Valleytronics exploits non-equivalent energy extrema in the electronic band structure of crystalline solids -- the valley degree of freedom -- to encode, manipulate, and read out i…
Valley-spin polarization at zero magnetic field induced by strong hole-hole interactions in monolayer WSe
Justin Boddison-Chouinard, Marek Korkusinski, Alex Bogan +9
Monolayer transition metal dichalcogenides have emerged as prominent candidates to explore the complex interplay between the spin and the valleys degrees of freedom. The strong spi…
Interacting holes in a gated WSe quantum channel: valley correlations and zigzag Wigner crystal
Jarosław Pawłowski, Daniel Miravet, Maciej Bieniek +5
We present a theory of interacting valence holes in a gate-defined one-dimensional quantum channel in a single layer of a transition metal dichalcogenide material WSe. Based on…
Charge detection using a WSe van der Waals heterostructure
Justin Boddison-Chouinard, Alex Bogan, Norman Fong +6
Detecting single charging events in quantum devices is an important step towards realizing practical quantum circuits for quantum information processing. In this work, we demonstra…
Gate controlled quantum dots in monolayer WSe2
Justin Boddison-Chouinard, Alex Bogan, Norman Fong +10
Quantum confinenement and manipulation of charge carriers are critical for achieving devices practical for quantum technologies. The interplay between electron spin and valley, as…
Flattening van der Waals heterostructure interfaces by local thermal treatment
Adina Luican-Mayer, Justin Boddison-Chouinard, Samantha Scarfe +2
Fabrication of custom-built heterostructures based on stacked 2D materials provides an effective method to controllably tune electronic and optical properties. To that end, optimiz…
Prevalence of oxygen defects in an in-plane anisotropic transition metal dichalcogenide
Ryan Plumadore, Mehmet Baskurt, Justin Boddison-Chouinard +7
Atomic scale defects in semiconductors enable their technological applications and realization of novel quantum states. Using scanning tunneling microscopy and spectroscopy complem…
Mechanistic insight into the limiting factors of graphene-based environmental sensors
Jean-Michel Guay, Ranjana Rautela, Samantha Scarfe +11
Graphene has demonstrated great promise for technological use, yet control over material growth and understanding of how material imperfections affect the performance of devices ar…