Gate-Defined One-Dimensional Channel and Broken Symmetry States in MoS${}_2$ van der Waals Heterostructures

Abstract

We have realized encapsulated trilayer MoS${}_2$ devices with gated graphene contacts. In the bulk, we observe an electron mobility as high as 7000~cm${}^2$/(V s) at a density of 3 $\times$ 10${}^{12}$~cm${}^{-2}$ at a temperature of 1.9~K. Shubnikov--de Haas oscillations start at magnetic fields as low as 0.9~T. The observed 3-fold Landau level degeneracy can be understood based on the valley Zeeman effect. Negatively biased split gate electrodes allow us to form a channel that can be completely pinched off for sufficiently large gate voltages. The measured conductance displays plateau-like features.

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References in corpus (13)

• Two Dimensional Atomic Crystals
• 2D materials and van der Waals heterostructures
• STM Spectroscopy of ultra-flat graphene on hexagonal boron nitride
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• Valley Zeeman Effect in Elementary Optical Excitations of a Monolayer WSe2
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• Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride
• Gate defined zero- and one-dimensional confinement in bilayer graphene
• Tunnelling Spectroscopy of Andreev States in Graphene
• Density-Dependent Quantum Hall States and Zeeman Splitting in Monolayer and Bilayer WSe${}_2$
• Quantum transport through MoS${}_2$ constrictions defined by photodoping
• Engineering Quantum Confinement in Semiconducting van der Waals Heterostructure

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