Gate-Defined Quantum Confinement in InSe-based van der Waals Heterostructures

Abstract

Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here we demonstrate strong quantum confinement and manipulation of single electrons in devices made from few-layer crystals of InSe using electrostatic gating. We report on gate-controlled quantum dots in the Coulomb blockade regime as well as one-dimensional quantization in point contacts, revealing multiple plateaus. The work represents an important milestone in the development of quality devices based on 2D materials and makes InSe a prime candidate for relevant electronic and optoelectronic applications.

arXiv comment13 pages, 3 figures

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Cited by in corpus (13)

• Enhanced Light-Matter Interaction in Two-Dimensional Transition Metal Dichalcogenides
• Indirect to direct gap crossover in two-dimensional InSe revealed by ARPES
• Raman spectroscopy of GaSe and InSe post-transition metal chalcogenides layers
• Ultra-thin van der Waals crystals as semiconductor quantum wells
• The optical properties of few-layer InSe
• Gate-Controlled Quantum Dots Based on Two-Dimensional Materials
• Hot Carrier and Surface Recombination Dynamics in Layered InSe Crystals
• Evidence of Direct Electronic Band Gap in two-dimensional van der Waals Indium Selenide crystals
• Gate defined quantum dot realized in a single crystalline InSb nanosheet
• Magnetotransport and lateral confinement in an InSe van der Waals Heterostructure
• Signature of spin-resolved quantum point contact in p-type trilayer WSe${}_2$ van der Waals heterostructure
• A double quantum dot defined by top gates in a single crystalline InSb nanosheet
• Semimetallic features in quantum transport through a gate-defined point contact in bilayer graphene