Ultra-thin van der Waals crystals as semiconductor quantum wells

Abstract

Control over the electronic spectrum at low energy is at the heart of the functioning of modern advanced electronics: high electron mobility transistors, semiconductor and Capasso terahertz lasers, and many others. Most of those devices rely on the meticulous engineering of the size quantization of electrons in quantum wells. This avenue, however, hasn't been explored in the case of 2D materials. Here we transfer this concept onto the van der Waals heterostructures which utilize few-layers films of InSe as quantum wells. The precise control over the energy of the subbands and their uniformity guarantees extremely high quality of the electronic transport in such systems. Using novel tunnelling and light emitting devices, for the first time we reveal the full subbands structure by studying resonance features in the tunnelling current, photoabsorption and light emission. In the future, these systems will allow development of elementary blocks for atomically thin infrared and THz light sources based on intersubband optical transitions in few-layer films of van der Waals materials.

arXiv comment12 pages, 3 figures

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Cited by in corpus (12)

• Quasi 1D electronic transport in a 2D magnetic semiconductor
• Ultra-clean assembly of van der Waals heterostructures
• The optical properties of few-layer InSe
• Electrical detection of the flat band dispersion in van der Waals field-effect structures
• Tunable spin-orbit coupling in two-dimensional InSe
• Crossover from weakly indirect to direct excitons in atomically thin films of InSe
• Flat-band-induced many-body interactions and exciton complexes in a layered semiconductor
• Terahertz control of photoluminescence emission in few-layer InSe
• Strong atomic reconstruction in twisted bilayers of highly flexible InSe: Machine-Learned Interatomic Potential and continuum model approaches
• Brightening dark excitons and trions in systems with a Mexican-hat energy dispersion: example of InSe
• Electrically modulated light-emitting diodes driven by resonant and antiresonant tunneling between Cr${}_2$Ge${}_2$Te${}_6$ electrodes
• Optical response of WSe${}_2$-based vertical tunneling junction