Quasi 1D electronic transport in a 2D magnetic semiconductor

Abstract

We investigate electronic transport through exfoliated multilayers of CrSBr, a 2D semiconductor that is attracting attention because of its magnetic properties. We find an extremely pronounced anisotropy that manifests itself in qualitative and quantitative differences of all quantities measured along the in-plane \textit{a} and \textit{b} crystallographic directions. In particular, we observe a qualitatively different dependence of the conductivities ${\sigma }_a$ and ${\sigma }_b$ on temperature and gate voltage, accompanied by orders of magnitude differences in their values (${\sigma }_b$/${\sigma }_a\approx 3\cdot 10^2-10^5$ at low temperature and large negative gate voltage). We also find a different behavior of the longitudinal magnetoresistance in the two directions, and the complete absence of the Hall effect in transverse resistance measurements. These observations appear not to be compatible with a description in terms of conventional band transport of a 2D doped semiconductor. The observed phenomenology -- together with unambiguous signatures of a 1D van Hove singularity that we detect in energy resolved photocurrent measurements -- indicate that electronic transport through CrSBr multilayers is better interpreted by considering the system as formed by weakly and incoherently coupled 1D wires, than by conventional 2D band transport. We conclude that CrSBr is the first 2D semiconductor to show distinctly quasi 1D electronic transport properties.

Accepted for publication in Advanced Materials

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• Magnetic 2D materials and heterostructures
• Triaxial magnetic anisotropy in the two-dimensional ferromagnetic semiconductor CrSBr
• Tailored tunnel magnetoresistance response in three ultrathin chromium trihalides
• Ultra-thin van der Waals crystals as semiconductor quantum wells
• Scanning photocurrent microscopy reveals electron-hole asymmetry in ionic liquid-gated WS2 transistors
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