Tailored tunnel magnetoresistance response in three ultrathin chromium trihalides
arXiv:1904.10476 · doi:10.1021/acs.nanolett.9b02357
Abstract
Materials that demonstrate large magnetoresistance have attracted significant interest for many decades. Recently, extremely large tunnel magnetoresistance (TMR) has been reported by several groups across ultrathin CrI by exploiting the weak antiferromagnetic coupling between adjacent layers. Here, we report a comparative study of TMR in all three chromium trihalides (CrX, X= Cl, Br, or I) in the two-dimensional limit. As the materials exhibit different transition temperatures and interlayer magnetic ordering in the ground state, tunneling measurements allow for an easy determination of the field-temperature phase diagram for the three systems. By changing sample thickness and biasing conditions, we then demonstrate how to maximize and further tailor the TMR response at different temperatures for each material. In particular, near the magnetic transition temperature, TMR is non-saturating up to the highest fields measured for all three compounds owing to the large, field-induced exchange coupling.
References in corpus (23)
- Spintronics: Fundamentals and applications
- Layer-dependent Ferromagnetism in a van der Waals Crystal down to the Monolayer Limit
- Discovery of intrinsic ferromagnetism in 2D van der Waals crystals
- Gate-tunable Room-temperature Ferromagnetism in Two-dimensional FeGeTe
- Titanic Magnetoresistance in WTe2
- Electrical Control of 2D Magnetism in Bilayer CrI3
- Giant Tunneling Magnetoresistance in Spin-Filter van der Waals Heterostructures
- Controlling magnetism in 2D CrI3 by electrostatic doping
- Electric-field switching of two-dimensional van der Waals magnets
- Robust Intrinsic Ferromagnetism and Half Semiconductivity in Stable Two-Dimensional Single-Layer Chromium Trihalides
- Stacking-Dependent Magnetism in Bilayer CrI
- On the origin of magnetic anisotropy in two dimensional CrI
- Very Large Tunneling Magnetoresistance in Layered Magnetic Semiconductor CrI
- Stacking tunable interlayer magnetism in bilayer CrI3
- Atomically Thin CrCl3: An in-Plane Layered Antiferromagnetic Insulator
- Evolution of interlayer and intralayer magnetism in three atomically thin chromium trihalides
- One million percent tunnel magnetoresistance in a magnetic van der Waals heterostructure
- Tuning Magnetotransport in a Compensated Semimetal at the Atomic Scale
- Hall effect in the extremely large magnetoresistance semimetal WTe
- Hall-effect within the colossal magnetoresistive semi-metallic state of MoTe2
- Direct evidence for charge compensation induced large magnetoresistance in thin WTe2
- The Enhanced Ferromagnetism of Single-Layer CrX3 (X=Br and I) by Van der Waals Engineering
- Origin of magnetoresistance suppression in thin -MoTe
Cited by in corpus (15)
- Hidden low-temperature magnetic order revealed through magnetotransport in monolayer CrSBr
- Spin-flop transition in atomically thin MnPS crystals
- Determining the phase diagram of atomically thin layered antiferromagnet CrCl
- Quasi 1D electronic transport in a 2D magnetic semiconductor
- Roadmap on quantum nanotechnologies
- Roadmap for gallium arsenide spin qubits
- In-plane magnetic domains and Néel-like domain walls in thin flakes of the room temperature CrTe van der Waals ferromagnet
- Progress and Prospects in Two-Dimensional Magnetism of van der Waals Materials
- Magneto-memristive switching in a two-dimensional layer antiferromagnet
- Magnetism-driven unconventional effects in Ising superconductors: role of proximity, tunneling, and nematicity
- Magnetism and stability of all primitive stacking patterns in bilayer chromium trihalides
- Physical Vapor Transport Growth of Antiferromagnetic CrCl Flakes Down to Monolayer Thickness
- Spin-dependent Schottky barriers and vacancy-induced spin-selective Ohmic contacts in magnetic vdW heterostructures
- Giant anisotropic magnetoresistance in few-layer α-RuCl3 tunnel junctions
- Magnetization dependent tunneling conductance of ferromagnetic barriers