Direct evidence for charge compensation induced large magnetoresistance in thin WTe2

Abstract

Since the discovery of extremely large non-saturating magnetoresistance (MR) in WTe2, much effort has been devoted to understanding the underlying mechanism, which is still under debate. Here, we explicitly identify the dominant physical origin of the large non-saturating MR through in-situ tuning of the magneto-transport properties in thin WTe2 film. With an electrostatic doping approach, we observed a non-monotonic gate dependence of the MR. The MR reaches a maximum (10600%) in thin WTe2 film at certain gate voltage where electron and hole concentrations are balanced, indicating that the charge compensation is the dominant mechanism of the observed large MR. Besides, we show that the temperature dependent magnetoresistance exhibits similar tendency with the carrier mobility when the charge compensation is retained, revealing that distinct scattering mechanisms may be at play for the temperature dependence of magneto-transport properties. Our work would be helpful for understanding mechanism of the large MR in other nonmagnetic materials and offers an avenue for achieving large MR in the non-magnetic materials with electron-hole pockets.

16 pages, 3 figures, accepted by Nano Letters

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• Tailored tunnel magnetoresistance response in three ultrathin chromium trihalides
• Abundant surface-semimetal phases in three-dimensional obstructed atomic insulators
• Optical conductivity of the type-II Weyl semimetal WTe${}_2$ under pressure
• Quantum oscillation study of the large magnetoresistance in Mo substituted WTe${}_2$ single crystals
• Site-dependent Local Spin Susceptibility and Low-energy Excitation in a Weyl Semimetal WTe${}_2$
• Purity-dependent Lorenz number, electron hydrodynamics and electron-phonon coupling in WTe${}_2$
• Linear non-saturating magnetoresistance and superconductivity in epitaxial thin films of YbSb${}_2$
• Magnetotransport in a 2D Hybrid Band System: Dirac and Heavy Hole Interplay