activity
20192026
most citedVan der Waals heterostructures for high-performance device applications: challenges and opportunities

539 citations · 1.4k across the 17 of their papers we have counts for

collaborators

17 papers

cond-mat.mes-hall2026

Orientation-tunable correlated Chern insulating states in chiral twisted double bilayer graphene proximitized by WSe2

Jiao Xie, Yongqin Xie, Fanqiang Chen +9

Moire flat bands in graphene systems proximitized by transition-metal dichalcogenides (TMDCs) provide a setting where spin-orbit coupling (SOC) can reshape band topology. The cryst…

cond-mat.mes-hall2026

Tunable Extended Magnetic Non-Fermi Liquid in Graphene Moiré Heterostructures

Yongqin Xie, Jian Wang, Moyu Chen +13

Exploring exotic quantum metallic states beyond Landau's Fermi liquid theory remains a central focus in condensed matter physics. Such non-Fermi liquid behavior is mostly observed…

cond-mat.mes-hall2024★ 45 cited

Selective and Quasi-continuous Switching of Ferroelectric Chern Insulator Device for Neuromorphic Computing

Moyu Chen, Yongqin Xie, Bin Cheng +11

Topologically protected edge state transport in quantum materials is dissipationless and features quantized Hall conductance, and shows great potential in highly fault-tolerant com…

cond-mat.mes-hall2024★ 22 cited

Electrical switching of Ising-superconducting nonreciprocity for quantum neuronal transistor

Junlin Xiong, Jiao Xie, Bin Cheng +11

Nonreciprocal quantum transport effect is mainly governed by the symmetry breaking of the material systems and is gaining extensive attention in condensed matter physics. Realizing…

cond-mat.mes-hall2024

Tunable moiré bandgap in hBN-aligned bilayer graphene device with in-situ electrostatic gating

Hanbo Xiao, Han Gao, Min Li +12

Over the years, great efforts have been devoted in introducing a sizable and tunable band gap in graphene for its potential application in next-generation electronic devices. The p…

cond-mat.mes-hall2024★ 27 cited

Interfacial magnetic spin Hall effect in van der Waals Fe3GeTe2/MoTe2 heterostructure

Yudi Dai, Junlin Xiong, Yanfeng Ge +13

The spin Hall effect (SHE) allows efficient generation of spin polarization or spin current through charge current and plays a crucial role in the development of spintronics. While…