Van der Waals heterostructures for high-performance device applications: challenges and opportunities

Abstract

Discovery of two-dimensional materials with unique electronic, superior optoelectronic or intrinsic magnetic order have triggered worldwide interests among the fields of material science, condensed matter physics and device physics. Vertically stacking of two-dimensional materials with distinct electronic and optical as well as magnetic properties enables to create a large variety of van der Waals heterostructures. The diverse properties of the vertical heterostructures open up unprecedented opportunities for various kinds of device applications, e.g. vertical field effect transistors, ultrasensitive infrared photodetectors, spin-filtering devices and so on, which are inaccessible in the conventional material heterostructures. Here, we review the current status of vertical heterostructures device applications in vertical transistors, infrared photodetectors and spintronic memory/transistors. The relevant challenges for achieving high-performance devices are presented. We also provide outlook on future development of vertical heterostructure devices with integrated electronic and optoelectronic as well as spintronic functinalities.

49 pages, 18 figures, published in Advanced Materials

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Cited by in corpus (29)

• Gate-tunable van der Waals heterostructure for reconfigurable neural network vision sensor
• Two-dimensional van der Waals electrical contact to monolayer MoSi${}_2$N${}_4$
• ZrTe2/CrTe2: an epitaxial van der Waals platform for spintronics
• Multiferroic van der Waals heterostructure FeCl${}_2$/Sc${}_2$CO${}_2$: Nonvolatile electrically switchable electronic and spintronic properties
• Dielectrics for Two-Dimensional Transition Metal Dichalcogenide Applications
• Acoustic twisted bilayer graphene
• Large-Area Electrodeposition of Few-Layer MoS2 on Graphene for 2D Material Heterostructures
• Electrical Contact between an Ultrathin Topological Dirac Semimetal and a Two-Dimensional Material
• Enhanced versatility of table-top X-rays from van der Waals structures
• Symmetric carbon tetramers forming chemically stable spin qubits in hBN
• Universal model for electron thermal-field emission from two-dimensional semimetals
• Remote free-carrier screening to boost the mobility of Fröhlich-limited 2D semiconductors
• Lanthanum Oxyhalide Monolayers: An Exceptional Dielectric Companion to Two-Dimensional Semiconductors
• Probing the ideal limit of interfacial thermal conductance in two-dimensional van der Waals heterostructures
• Superexchange interactions and magnetic anisotropy in MnPSe${}_3$ monolayer
• Tunable Nanostructuring for van der Waals Materials
• Ultrafast nano-imaging of dark excitons
• At the verge of topology: vacancy-driven quantum spin Hall in trivial insulators
• Confined-state physics and signs of fermionization of moiré excitons in WSe${}_2$/MoSe${}_2$ heterobilayers
• In-Plane Magnetic Anisotropy and Large topological Hall Effect in Self-Intercalated Ferromagnet Cr1.61Te2
• Van der Waals Layered Ferroelectric CuInP2S6: Physical Properties and Device Applications
• Designing Efficient Metal Contacts to Two-Dimensional Semiconductors MoSi${}_2$N${}_4$ and WSi${}_2$N${}_4$ Monolayers
• Molecular Beam Epitaxy of Mn2In2Se5 van der Waals Layers Using Mn Intercalation
• Giant Self Spin-Valve Effect in the Kagome Helimagnet
• Direct evidence from high-field magnetotransport for a dramatic change of quasiparticle character in van der Waals ferromagnet Fe${}_{3-x}$GeTe${}_2$
• Two-dimensional Intrinsic Janus Structures: Design Principle and Anomalous Nonlinear Optics
• Room-temperature hybrid 2D-3D quantum spin system for enhanced magnetic sensing and many-body dynamics
• Defect Passivation and Förster-Type Energy Exchange in H2Pc-TMD Organic-Inorganic Heterostructures
• Epitaxy of new layered materials: 2D chalcogenides and challenges of weak van der Waals interactions