Van der Waals heterostructures for high-performance device applications: challenges and opportunities
arXiv:1912.10886 · doi:10.1002/adma.201903800
Abstract
Discovery of two-dimensional materials with unique electronic, superior optoelectronic or intrinsic magnetic order have triggered worldwide interests among the fields of material science, condensed matter physics and device physics. Vertically stacking of two-dimensional materials with distinct electronic and optical as well as magnetic properties enables to create a large variety of van der Waals heterostructures. The diverse properties of the vertical heterostructures open up unprecedented opportunities for various kinds of device applications, e.g. vertical field effect transistors, ultrasensitive infrared photodetectors, spin-filtering devices and so on, which are inaccessible in the conventional material heterostructures. Here, we review the current status of vertical heterostructures device applications in vertical transistors, infrared photodetectors and spintronic memory/transistors. The relevant challenges for achieving high-performance devices are presented. We also provide outlook on future development of vertical heterostructure devices with integrated electronic and optoelectronic as well as spintronic functinalities.
49 pages, 18 figures, published in Advanced Materials
References in corpus (25)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- 2D materials and van der Waals heterostructures
- Boron nitride substrates for high-quality graphene electronics
- Atomically thin p-n junctions with van der Waals heterointerfaces
- Magnetic 2D materials and heterostructures
- Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics
- Mixed-Dimensional van der Waals Heterostructures
- Graphene Spintronics
- Broadband Linear-Dichroic Photodetector in a Black Phosphorus Vertical p-n Junction
- Photocurrent generation with two-dimensional van der Waals semiconductors
- Strong Oxidation Resistance of Atomically Thin Boron Nitride Nanosheets
- Tunable optical properties of multilayers black phosphorus thin films
- Proximity-induced ferromagnetism in graphene revealed by anomalous Hall effect
- Spin-Orbit Proximity Effect in Graphene
- Twist-controlled resonant tunnelling in graphene-boron nitride-graphene heterostructures
- Palladium Diselenide Long-Wavelength Infrared Photodetector with High Sensitivity and Stability
- Highly efficient spin-orbit torque and switching of layered ferromagnet Fe3GeTe2
- Observation of ballistic avalanche phenomena in nanoscale vertical InSe/BP heterostructures
- Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures
- Antisymmetric magnetoresistance in van der Waals Fe3GeTe2/graphite/Fe3GeTe2 tri-layer heterostructures
- Large current modulation in exfoliated-graphene/MoS2/metal vertical heterostructures
- Coulomb Drag and Magnetotransport in Graphene Double Layers
- Current-temperature scaling for a Schottky interface with non-parabolic energy dispersion
- Efficient spin injection into graphene through a tunnel barrier: overcoming the spin conductance mismatch