Two-dimensional van der Waals electrical contact to monolayer MoSi$_2$N$_4$

Liemao Cao; Guanghui Zhou; Qianqian Wang; L. K. Ang; Yee Sin Ang

doi:10.1063/5.0033241

paper

Two-dimensional van der Waals electrical contact to monolayer MoSi $_{2}$ N $_{4}$

arXiv:2010.05815 · doi:10.1063/5.0033241

Abstract

Two-dimensional (2D) MoSi $_{2}$ N $_{4}$ monolayer is an emerging class of air-stable 2D semiconductor possessing exceptional electrical and mechanical properties. Despite intensive recent research efforts devoted to uncover the material properties of MoSi $_{2}$ N $_{4}$ , the physics of electrical contacts to MoSi $_{2}$ N $_{4}$ remains largely unexplored thus far. In this work, we study the van der Waals heterostructures composed of MoSi $_{2}$ N $_{4}$ contacted by graphene and NbS $_{2}$ monolayers using first-principle density functional theory calculations. We show that the MoSi $_{2}$ N $_{4}$ /NbS $_{2}$ contact exhibits an ultralow Schottky barrier height (SBH), which is beneficial for nanoelectronics applications. For MoSi $_{2}$ N $_{4}$ /graphene contact, the SBH can be modulated via interlayer distance or via external electric fields, thus opening up an opportunity for reconfigurable and tunable nanoelectronic devices. Our findings provide insights on the physics of 2D electrical contact to MoSi $_{2}$ N $_{4}$ , and shall offer a critical first step towards the design of high-performance electrical contacts to MoSi $_{2}$ N $_{4}$ -based 2D nanodevices.

5 pages, 5 figures (accepted version, to appear in Applied Physics Letters)

Two-dimensional van der Waals electrical contact to monolayer MoSi $_{2}$ N $_{4}$

Abstract

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Two-dimensional van der Waals electrical contact to monolayer MoSi2​N4​

Abstract

References in corpus (6)

Cited by in corpus (19)

Two-dimensional van der Waals electrical contact to monolayer MoSi $_{2}$ N $_{4}$