Van der Waals metal-semiconductor junction: weak Fermi level pinning enables effective tuning of Schottky barrier

Abstract

Two-dimensional (2D) semiconductors have shown great promise in (opto)electronic applications. However, their developments are limited by a large Schottky barrier (SB) at the metal-semiconductor junction (MSJ), which is difficult to tune by using conventional metals due to the strong Fermi level pinning (FLP) effect. Here we show that, this problem can be overcome by using 2D metals, which are bounded with 2D semiconductors through van der Waals (vdW) interaction. This success relies on a weak FLP at the vdW MSJ, which is attributed to the suppression of metal-induced gap states. Consequently, the SB becomes tunable and can vanish with proper 2D metals (e.g. H-NbS2). This work not only offers new insights into the fundamental properties of heterojunctions, but also uncovers great potential of 2D metals in device applications.

References in corpus (5)

• Electrical characterization of fully encapsulated ultra thin black phosphorus-based heterostructures with graphene contacts
• Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors
• Controlling the Schottky barrier at MoS2|metal contacts by inserting a BN monolayer
• Visualizing Band Offsets and Edge States in Bilayer-Monolayer Transition Metal Dichalcogenides Lateral Heterojunction
• Air passivation of chalcogen vacancies in two-dimensional semiconductors

Cited by in corpus (57)

• Field-effect transistors made from solution-grown two-dimensional tellurene
• Topological superconductivity in a van der Waals heterostructure
• Atomically thin p-n junctions based on two-dimensional materials
• Two-dimensional van der Waals electrical contact to monolayer MoSi${}_2$N${}_4$
• Hybrid Graphene/Silicon Schottky photodiode with intrinsic gating effect
• Van der Waals Multiferroic Tunnel Junctions
• Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two-Dimensional Electronics
• High Current Density and Low Thermal Conductivity of Atomically Thin Semimetallic WTe2
• A new opportunity for two-dimensional van der Waals heterostructures: making steep-slope transistors
• Long-Lived Charge Separation Following Pump-Energy Dependent Ultrafast Charge Transfer in Graphene/WS${}_2$ Heterostructures
• Low-Temperature Eutectic Synthesis of PtTe2 with Weak Antilocalization and Controlled Layer Thinning
• Guide to optical spectroscopy of layered semiconductors
• Interfacial and Electronic Properties of Heterostructures of MXene and Graphene
• Structure, preparation, and applications of 2D material-based metal-semiconductor heterostructures
• Creation of moiré bands in a monolayer semiconductor by spatially periodic dielectric screening
• InSe Schottky diodes based on van der Waals contacts
• Strain-engineering the Schottky barrier and electrical transport on MoS2
• Tunable electronic properties and band alignments of MoSi${}_2$N${}_4$/GaN and MoSi${}_2$N${}_4$/ZnO van der Waals heterostructures
• N- and p-type carrier injections into WSe2 with van der Waals contacts of two-dimensional materials
• Boosting quantum yields in 2D semiconductors via proximal metal plates
• Accurate Extraction of Schottky Barrier Height and Universality of Fermi Level De-pinning of van der Waals Contacts
• Semimetal Contacts to Monolayer Semiconductor: Weak Metalization as an Effective Mechanism to Schottky Barrier Lowering
• Bridging the gap between atomically thin semiconductors and metal leads
• Tuning the electronic structure of α-antimonene monolayer through interface engineering
• Localized Excitons in NbSe${}_2$-MoSe${}_2$ Heterostructures
• Built-in potential and band alignment of matter
• Interfacial bound exciton state in a hybrid structure of monolayer WS2 and InGaN quantum dots
• Signatures of Topological Superconductivity in Bulk Insulating Topological Insulator BiSbTe${}_{1.25}$Se${}_{1.75}$ in Proximity with Superconducting NbSe${}_2$
• Wavelength conversion through plasmon-coupled surface states
• Bound hole states associated to individual vanadium atoms incorporated into monolayer WSe${}_2$
• Two-dimensional Kagome Materials: Theoretical Insights, Experimental Realizations, and Electronic Structures
• Semiconductor-metal phase transition and emergent charge density waves in 1T-ZrX${}_2$ (X = Se, Te) at the two-dimensional limit
• Interfacial properties of black phosphorus/transition metal carbide van der Waals heterostructures
• Charged exciton kinetics in monolayer MoSe${}_2$ near ferroelectric domain walls in periodically poled LiNbO${}_3$
• Diode-like Selective Enhancement of Carrier Transport through Metal-Semiconductor Interface Decorated by Monolayer Boron Nitride
• Schottky barrier lowering due to interface states in 2D heterophase devices
• Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures
• Dirac-Source Diode with Sub-unity Ideality Factor
• Surface charge-transfer doping a quantum-confined silver monolayer beneath epitaxial graphene
• Two phase transitions driven by surface electron-doping in WTe${}_2$
• Investigation of laser-induced-metal phase of ${\mathrm{MoTe}}_2$ and its contact property via scanning gate microscopy
• Canonical Schottky barrier heights of the transition metal dichalcogenide monolayers in contact with a metal
• First Principles Study of 2D Ring-Te and its Electrical Contact with Topological Dirac Semimetal
• Van der Waals Schottky barriers as interface probes of the correlation between chemical potential shifts and charge density wave formation in 1T-TiSe${}_2$ and 2H-NbSe${}_2$
• Detection of charge density wave phase transitions at 1T-TaS${}_2$/GaAs interfaces
• Two dimensional semiconductors: optical and electronic properties
• Electrical transport properties of atomically thin WSe2 using perpendicular magnetic anisotropy metal contacts
• Designing Efficient Metal Contacts to Two-Dimensional Semiconductors MoSi${}_2$N${}_4$ and WSi${}_2$N${}_4$ Monolayers
• Tuning the p-type Schottky barrier in 2D metal/semiconductor interface: boron-sheet/\mose, and /\wse
• Spin dependent charge transfer in MoSe2/hBN/Ni hybrid structures
• Symmetric Domain Segmentation in WS2 Flakes: Correlating spatially resolved photoluminescence, conductance with valley polarization
• Electrical Control of Excitons in Bare-MoSe2 and MoSe2/NbSe2 Heterostructure
• Angular dependence of the interlayer coupling at the interface between two dimensional materials 1T-PtSe${}_2$ and graphene
• A back-to-back diode model applied to MoS2 van der Waals Schottky diodes
• Gating monolayer and bilayer graphene with a two-dimensional semiconductor
• Charge distribution at metal-multilayered semiconductor interfaces
• Super-ideal diodes at the Schottky-Mott limit in gated graphene-WSe${}_2$ heterojunctions