Diode-like Selective Enhancement of Carrier Transport through Metal-Semiconductor Interface Decorated by Monolayer Boron Nitride

Abstract

Two-dimensional (2D) semiconductors are promising material candidates for next-generation nanoelectronics. However, there are fundamental challenges related to their metal-semiconductor (MS) contacts which limit the performance potential for practical device applications. In this work, we exploit 2D monolayer hexagonal boron nitride (h-BN) as an ultrathin decorating layer to form a metal-insulator-semiconductor (MIS) contact, and demonstrate a novel diode-like selective enhancement of the carrier transport through it. Compared to the conventional MS contact, the MIS contact dominated by both thermionic emission and quantum tunneling can significantly reduce the contact resistance and boost the electron transport from the semiconductor to the metal, but has negligible effects on the electron transport oppositely. We also investigate the negative barrier height with the concept of carrier collection barrier, and show its critical role at the drain end for determining the overall transistor performance.

arXiv commentCurrently under review

References in corpus (18)

• Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
• Tuning the graphene work function by electric field effect
• Strong Oxidation Resistance of Atomically Thin Boron Nitride Nanosheets
• Van der Waals metal-semiconductor junction: weak Fermi level pinning enables effective tuning of Schottky barrier
• Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition
• Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions
• Atomically Thin Boron Nitride: Unique Properties and Applications
• Towards barrier free contact to MoS2 using graphene electrodes
• Ultimate Thin Vertical p-n Junction Composed of 2D Layered Molybdenum Disulfide
• Atomically-thin Ohmic Edge Contacts Between Two-dimensional Materials
• Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors
• Controlling the Schottky barrier at MoS2|metal contacts by inserting a BN monolayer
• Low Resistance Metal Contacts to MoS2 Devices with Nickel-Etched-Graphene Electrodes
• A first-principles study of van der Waals interactions and lattice mismatch at MoS2/metal interfaces
• MoS2 Field-effect Transistors with Graphene/Metal Heterocontacts
• Contact Research Strategy for Emerging Molybdenum Disulfide and Other Two-Dimensional Field-effect Transistors
• Enhanced Carrier Transport by Transition Metal Doping in WS2 Field Effect Transistors
• Bilayer h-BN Barriers for Tunneling Contacts in Fully-Encapsulated Monolayer $\mathbf{MoS}{\mathbf{e}}_2$ Field-Effect Transistors

Cited by in corpus (1)

• Dirac-Source Diode with Sub-unity Ideality Factor