Low Resistance Metal Contacts to MoS2 Devices with Nickel-Etched-Graphene Electrodes

Abstract

We report an approach to achieve low-resistance contacts to MoS2 transistors with the intrinsic performance of the MoS2 channel preserved. Through a dry transfer technique and a metal-catalyzed graphene treatment process, nickel-etched-graphene electrodes were fabricated on MoS2 that yield contact resistance as low as 200 ohm-um. The substantial contact enhancement (~2 orders of magnitude) as compared to pure nickel electrodes, is attributed to the much smaller work function of nickel-graphene electrodes, together with the fact that presence of zigzag edges in the treated graphene surface enhances tunneling between nickel and graphene. To this end, the successful fabrication of a clean graphene-MoS2 interface and a low resistance nickel-graphene interface is critical for the experimentally measured low contact resistance. The potential of using graphene as an electrode interlayer demonstrated in this work paves the way towards achieving high performance next-generation transistors.

References in corpus (8)

• Density functional method for nonequilibrium electron transport
• Doping graphene with metal contacts
• First-principles study of the interaction and charge transfer between graphene and metals
• Channel Length Scaling of MoS2 MOSFETs
• Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2
• Molecular Doping of Multilayer MoS2 Field-effect Transistors: Reduction in Sheet and Contact Resistances
• Low-Contact-Resistance Graphene Devices with Nickel-Etched-Graphene Contacts
• MoS2 Field-effect Transistors with Graphene/Metal Heterocontacts

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• A first-principles study of van der Waals interactions and lattice mismatch at MoS2/metal interfaces
• Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides
• Ohmic contacts to 2D semiconductors through van der Waals bonding
• Atomically Controlled Tunable Doping in High Performance WSe2 Devices
• Nature of carrier injection in metal/2D semiconductor interface and its implications to the limits of contact resistance
• Tuning the Threshold Voltage of MoS2 Field-Effect Transistors via Surface Treatment
• Electron transport through metal/MoS2 interfaces: edge- or area-dependent process?
• Accurate Extraction of Schottky Barrier Height and Universality of Fermi Level De-pinning of van der Waals Contacts
• van der Waals Bonded Co/h-BN Contacts to Ultrathin Black Phosphorus Devices
• Prospects of Zero Schottky Barrier Height in a Graphene Inserted MoS2-Metal Interface
• Gold on WSe2 Single Crystal Film as a Substrate for Surface Enhanced Raman Scattering (SERS) Sensing
• Diode-like Selective Enhancement of Carrier Transport through Metal-Semiconductor Interface Decorated by Monolayer Boron Nitride
• Origin of Contact Resistance at Ferromagnetic Metal-Graphene Interfaces
• Density Functional Theory based Study of Chlorine Doped WS2-metal Interface
• Gate controlled large resistance switching driven by charge density wave in 1T-TaS2/2H-MoS2 heterojunction
• Ab-initio quantum transport simulation of self-heating in single-layer 2-D materials
• Genuine Ohmic van der Waals contact between indium and MoS2
• Impact of a $Mo{S}_2$ monolayer on the nanoscale thermoelastic response of silicon heterostructures