687 citations · 1.5k across the 10 of their papers we have counts for
10 papers
Origin and Electronic Behavior of Improper Ferroelectricity in AB2 (A=Cr, Mo, W; B=S, Se, Te) Transition Metal Dichalcogenides
Chengcheng Xiao, Zhu-An Xu, Xin Luo +1
Persistent electrical polarized states are fundamentally important to the electric industry as they can be used in the non-volatile memory, the artificial neuromorphic network, and…
van der Waals Bonded Co/h-BN Contacts to Ultrathin Black Phosphorus Devices
Ahmet Avsar, Jun Y. Tan, Luo Xin +6
Due to the chemical inertness of 2D hexagonal-Boron Nitride (h-BN), few atomic-layer h-BN is often used to encapsulate air-sensitive 2D crystals such as Black Phosphorus (BP). Howe…
Tuning the Threshold Voltage of MoS2 Field-Effect Transistors via Surface Treatment
Wei Sun Leong, Yida Li, Xin Luo +3
Controlling the threshold voltage (Vth) of a field-effect transistor is important for realizing robust logic circuits. Here, we report a facile approach to achieve bidirectional Vt…
Large Frequency Change with Thickness in Interlayer Breathing Mode - Significant Interlayer Interactions in Few Layer Black Phosphorus
Xin Luo, Xin Lu, Gavin Kok Wai Koon +4
Bulk black phosphorus (BP) consists of puckered layers of phosphorus atoms. Few-layer BP, obtained from bulk BP by exfoliation, is an emerging candidate as a channel material in po…
Stacking sequence determines Raman intensities of observed interlayer shear modes in 2D layered materials - A general bond polarizability model
Xin Luo, Chunxiao Cong, Xin Lu +3
2D layered materials have recently attracted tremendous interest due to their fascinating properties and potential applications. The interlayer interactions are much weaker than th…
Low Resistance Metal Contacts to MoS2 Devices with Nickel-Etched-Graphene Electrodes
Wei Sun Leong, Xin Luo, Yida Li +3
We report an approach to achieve low-resistance contacts to MoS2 transistors with the intrinsic performance of the MoS2 channel preserved. Through a dry transfer technique and a me…