687 citations · 1.5k across the 10 of their papers we have counts for
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Origin and Electronic Behavior of Improper Ferroelectricity in AB2 (A=Cr, Mo, W; B=S, Se, Te) Transition Metal Dichalcogenides
Chengcheng Xiao, Zhu-An Xu, Xin Luo +1
Persistent electrical polarized states are fundamentally important to the electric industry as they can be used in the non-volatile memory, the artificial neuromorphic network, and…
van der Waals Bonded Co/h-BN Contacts to Ultrathin Black Phosphorus Devices
Ahmet Avsar, Jun Y. Tan, Luo Xin +6
Due to the chemical inertness of 2D hexagonal-Boron Nitride (h-BN), few atomic-layer h-BN is often used to encapsulate air-sensitive 2D crystals such as Black Phosphorus (BP). Howe…
Tuning the Threshold Voltage of MoS2 Field-Effect Transistors via Surface Treatment
Wei Sun Leong, Yida Li, Xin Luo +3
Controlling the threshold voltage (Vth) of a field-effect transistor is important for realizing robust logic circuits. Here, we report a facile approach to achieve bidirectional Vt…
Low Resistance Metal Contacts to MoS2 Devices with Nickel-Etched-Graphene Electrodes
Wei Sun Leong, Xin Luo, Yida Li +3
We report an approach to achieve low-resistance contacts to MoS2 transistors with the intrinsic performance of the MoS2 channel preserved. Through a dry transfer technique and a me…