Electron transport through metal/MoS2 interfaces: edge- or area-dependent process?

Abstract

In ultra-thin two-dimensional (2-D) materials, the formation of ohmic contacts with top metallic layers is a challenging task that involves different processes than in bulk-like structures. Besides the Schottky barrier height, the transfer length of electrons between metals and 2-D monolayers is a highly relevant parameter. For MoS${}_2$, both short ($\le$30 nm) and long ($\ge$0.5 $\mu$m) values have been reported, corresponding to either an abrupt carrier injection at the contact edge or a more gradual transfer of electrons over a large contact area. Here we use \textit{ab initio} quantum transport simulations to demonstrate that the presence of an oxide layer between a metallic contact and a MoS${}_2$ monolayer, for example TiO${}_2$ in case of titanium electrodes, favors an area-dependent process with a long transfer length, while a perfectly clean metal-semiconductor interface would lead to an edge process. These findings reconcile several theories that have been postulated about the physics of metal/MoS${}_2$ interfaces and provide a framework to design future devices with lower contact resistances.

References in corpus (3)

• Atomically thin p-n junctions with van der Waals heterointerfaces
• Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition
• Low Resistance Metal Contacts to MoS2 Devices with Nickel-Etched-Graphene Electrodes

Cited by in corpus (2)

• 2-D materials for ultra-scaled field-effect transistors: hundred candidates under the ab initio microscope
• Winterface: An Interface from Wannier90 to Quantum Transport