activity
20092026
most citedOn the suitability of hBN as an insulator for 2D material-based ultrascaled CMOS devices

366 citations · 1.8k across the 53 of their papers we have counts for

collaborators

55 papers

cond-mat.mtrl-sci2026★ 12 cited

Multiscale Modeling of Metal/Oxide/Metal Conductive Bridging Random Access Memory Cells: from Ab Initio to Finite Element Calculations

Jan Aeschlimann, Fabian Durch, Christoph Weilenmann +3

We present a multiscale simulation framework to compute the current vs. voltage (I-V ) characteristics of metal/oxide/metal structures building the core of conductive bridging rand…

cond-mat.mes-hall2023★ 3 cited

Exchange interactions and intermolecular hybridization in a spin-1/2 nanographene dimer

N. Krane, E. Turco, A. Bernhardt +8

Phenalenyl is a radical nanographene with triangular shape that hosts an unpaired electron with spin S = 1/2. The open-shell nature of phenalenyl is expected to be retained in cova…

cond-mat.mes-hall2023

Ab initio Self-consistent GW Calculations in Non-Equilibrium Devices: Auger Recombination and Electron-Electron Scattering

Leonard Deuschle, Jonathan Backman, Mathieu Luisier +1

We present first-principles quantum transport simulations of single-walled carbon nanotubes based on the NEGF method and including carrier-carrier interactions within the self-cons…

cond-mat.mes-hall2023★ 3 cited

Platinum contacts for 9-atom-wide armchair graphene nanoribbons

Chunwei Hsu, Michael Rohde, Gabriela Borin Barin +7

Creating a good contact between electrodes and graphene nanoribbons (GNRs) has been a longstanding challenge in searching for the next GNR-based nanoelectronics. This quest require…

cond-mat.str-el2023

Strongly correlated physics in organic open-shell quantum systems

G. Gandus, A. Jayaraj, D. Passerone +3

Strongly correlated physics arises from electron-electron scattering within partially filled orbitals. Organic molecules in open-shell configurations are therefore good candidates…

cond-mat.dis-nn2022

An Atomistic Model of Field-Induced Resistive Switching in Valence Change Memory

Manasa Kaniselvan, Mathieu Luisier, Marko Mladenović

In Valence Change Memory (VCM) cells, the conductance of an insulating switching layer is reversibly modulated by creating and redistributing point defects under an external field.…