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20242026
most citedMechanisms of Resistive Switching in 2D Monolayer and Multilayer Materials

35 citations · 47 across the 4 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2026

Experimentally constrained modeling of the Pockels response of KNbO3 and KTaNbO3

Virginie de Mestral, Lorenzo Bastonero, Petr Bednyakov +6

The soft-mode of electro-optic (EO) metal-oxide perovskites plays a critical role in determining their Pockels responses. This is the case of potassium tantalate niobate (KTN), whi…

cond-mat.mtrl-sci2025★ 35 cited

Mechanisms of Resistive Switching in 2D Monolayer and Multilayer Materials

M. Kaniselvan, Y. R. Jeon, M. Mladenović +2

The power and energy consumption of resistive switching devices can be lowered by reducing their active layer dimensions. Efforts to push this low-energy switching property to its…

cond-mat.mtrl-sci2025★ 7 cited

Termination-Dependent Resistive Switching in SrTiO Valence Change Memory Cells

Marko Mladenović, Manasa Kaniselvan, Christoph Weilenmann +2

Valence change memory (VCM) cells based on SrTiO (STO), a perovskite oxide, are a promising type of emerging memory device. While the operational principle of most VCM cells re…

cond-mat.mtrl-sci2025★ 1 cited

Ab initio functional-independent calculations of the clamped Pockels tensor of tetragonal barium titanate

Virginie de Mestral, Lorenzo Bastonero, Michele Kotiuga +3

We present an ab initio method to calculate the clamped Pockels tensor of ferroelectric materials from density-functional theory, the modern theory of polarization exploiting the e…

cond-mat.mes-hall2024★ 4 cited

Influence of Carrier-Carrier Interactions on the Sub-threshold Swing of Band-to-Band Tunnelling Transistors

Chen Hao Xia, Leonard Deuschle, Jiang Cao +2

Band-to-band tunnelling field-effect transistors (TFETs) have long been considered as promising candidates for future low-power logic applications. However, fabricated TFETs rarely…