35 citations · 36 across the 2 of their papers we have counts for
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Mechanisms of Resistive Switching in 2D Monolayer and Multilayer Materials
M. Kaniselvan, Y. R. Jeon, M. Mladenović +2
The power and energy consumption of resistive switching devices can be lowered by reducing their active layer dimensions. Efforts to push this low-energy switching property to its…
Termination-Dependent Resistive Switching in SrTiO Valence Change Memory Cells
Marko Mladenović, Manasa Kaniselvan, Christoph Weilenmann +2
Valence change memory (VCM) cells based on SrTiO (STO), a perovskite oxide, are a promising type of emerging memory device. While the operational principle of most VCM cells re…
Ab initio functional-independent calculations of the clamped Pockels tensor of tetragonal barium titanate
Virginie de Mestral, Lorenzo Bastonero, Michele Kotiuga +3
We present an ab initio method to calculate the clamped Pockels tensor of ferroelectric materials from density-functional theory, the modern theory of polarization exploiting the e…