25 citations · 32 across the 8 of their papers we have counts for
8 papers
Simulation of exchange coupling effects in double quantum dot FinFET-like structures
Ilan Bouquet, Alexander Maeder, Mathieu Luisier
By leveraging a GPU-accelerated Schrödinger-Poisson (SP) solver, we characterize exchange coupling in a hole spin double-qubit device involving a double quantum dot (DQD) system fo…
Channel-last gate-all-around nanosheet oxide semiconductor transistors
Fabia F. Athena, Xiangjin Wu, Nathaniel S. Safron +18
As we move beyond the era of transistor miniaturization, back-end-of-line-compatible transistors that can be stacked monolithically in the third dimension promise improved performa…
Ab-initio Quantum Transport with the GW Approximation, 42,240 Atoms, and Sustained Exascale Performance
Nicolas Vetsch, Alexander Maeder, Vincent Maillou +7
Designing nanoscale electronic devices such as the currently manufactured nanoribbon field-effect transistors (NRFETs) requires advanced modeling tools capturing all relevant quant…
Simulation of single hole spin qubit in strained triangular FinFET quantum devices
Ilan Bouquet, Jiang Cao, Mathieu Luisier
Using an in-house Schroedinger-Poisson (SP) solver, we investigate the creation of a single hole spin qubit inside a triple-gate triangular silicon fin field effect transistor (Si…
Electron-Electron Interactions in Device Simulation via Non-equilibrium Green's Functions and the GW Approximation
Leonard Deuschle, Jiang Cao, Alexandros Nikolaos Ziogas +4
The continuous scaling of metal-oxide-semiconductor field-effect transistors (MOSFETs) has led to device geometries where charged carriers are increasingly confined to ever smaller…
Phonon-Limited Transport in 2D Materials: A Unified Approach for ab initio Mobility and Current Calculations
Jonathan Backman, Youseung Lee, Mathieu Luisier
This paper presents an ab initio methodology to account for electron-phonon interactions in 2D materials, focusing on transition metal dichalcogenides (TMDCs). It combines density…
Field-Effect Transistors based on 2-D Materials: a Modeling Perspective
Mathieu Luisier, Cedric Klinkert, Sara Fiore +4
Two-dimensional (2D) materials are particularly attractive to build the channel of next-generation field-effect transistors (FETs) with gate lengths below 10-15 nm. Because the 2D…
Ab initio mobility of mono-layer MoS2 and WS2: comparison to experiments and impact on the device characteristics
Youseung Lee, Sara Fiore, Mathieu Luisier
We combine the linearized Boltzmann Transport Equation (LBTE) and quantum transport by means of the Non-equilibrium Green's Functions (NEGF) to simulate single-layer MoS2 and WS2 u…